KEC KTA1279 Datasheet
SEMICONDUCTOR
KTA1279
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
TECHNICAL DATA
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
-300 V
-300 V
-5.0 V
-500 mA
500 mA
625 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. COLLECTOR
3. BASE
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note :* Pulse test : PWᴪ300ỌS, Duty Cycle⏊2%
V
(BR)CBO
V
(BR)CEO
h
V
CE(sat)
V
BE(sat)
C
FE
*
f
T
ob
IC=-100ỌA, IE=0
IC=-1.0mA, IB=0
IC=-1.0mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-30mA, VCE=-10V
* IC=-20mA, IB=-2.0mA
* IC=-20mA, IB=-2.0mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, IE=0, f=1MHz
TO-92
-300 - -
-300 - -
25 - -
40 - -
25 - -
- - -0.5 V
- - -0.9 V
50 - - MHz
- - 6.0 V
ỌA
ỌA
1994. 6. 15 1/1
Revision No : 0
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