KEC KTA1225L, KTA1225D Datasheet
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1225D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTC2983D/L
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-160 V
Collector-Emitter Voltage
V
CEO
-160 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-1.5 A
Base Current
I
B
-0.3 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-160V, IE=0
- - -1.0
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-10mA, IB=0
-160 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-1mA, IC=0
-5.0 - - V
DC Current Gain
hFE(Note) VCE=-5V, IC=-100mA
70 - 240
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-500mA, IB=-50mA
- - -1.5 V
Base-Emitter Voltage
V
BE
VCE=-5V, IC=-500mA
- - -1.0 V
Transition Frequency
f
T
VCE=-10V, IC=-100mA
- 100 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 30 - pF
Note : hFEClassification O:70~140, Y:120~240
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
K
F
A
C
F
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
_
6.60 0.2
+
_
6.10 0.2
+
_
5.0 0.2
+
_
1.10 0.2
+
_
2.70 0.2
+
_
2.30 0.1
+
1.00 MAX
_
2.30 0.2
+
_
0.5 0.1
+
_
2.00 0.20
+
_
0.50 0.10
+
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
2003. 3. 27 2/3
KTA1225D/L
Revision No : 2
I - V
CCE
-1.0
-0.8
C
-20mA
-8mA
-12mA
-0.6
-0.4
I =-2mA
B
-0.2
COLLECTOR CURRENT I (A)
0
0-2-4-6
-8 -10 -12 -14 -16
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat)
-1
COMMON EMITTER
I /I =10
B
C
-0.5
-0.3
CE(sat)
-0.1
VOLTAGE V (V)
-0.05
-0.03
COLLECTOR-EMITTER SATURATION
-0.01 -0.03 -0.1 -0.3
-6mA
-4mA
0mA
Tc=100 C
C
COMMON
EMITTER
Tc=25 C
CE
Tc=25 C
Tc=-25 C
h - I
CFE
300
Tc=100 C
FE
Tc=25 C
100
Tc=-25 C
50
30
DC CURRENT GAIN h
COMMON EMITTER
V =-5V
CE
10
-0.003 -3-1
-0.01 -0.03 -0.1 -0.3
COLLECTOR CURRENT I (A)
I - V
C
BE
C
-1.0
COMMON
EMITTER
-0.8
C
-0.6
-0.4
V =-5V
CE
C
Tc=25
Tc=100 C
Tc=-25 C
-0.2
COLLECTOR CURRENT I (A)
0
-1 -3-0.003
-0.20
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4
COLLECTOR CURRENT I (A)
f - I
TC
300
T
100
50
30
TRANSITION FREQUENCY f (MHz)
0
-0.005
-0.01
-0.03
COLLECTOR CURRENT I (A)
C
COMMON EMITTER
V =-10V
CE
Tc=25 C
-0.1 -0.3 -1
C
BASE-EMITTER VOLTAGE V (V)
Pc - Ta
30
C
25
20
15
10
COLLECTOR POWER DISSIPAZTION P (W)
1
5
2
0
0
20 40
60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta ( C)
BE
1
2
Tc=25 C
Ta=25 C
Loading...