KEC KTA1204D, KTA1204L Datasheet
2003. 3. 27 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTA1204D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH CURRENT SWITCHING APPLICATION.
APPLICATION
Relay drivers, high-speed inverters, converters, and other
general high-current switching applications.
FEATURES
Low Collector Emitter Saturation Voltage.
: V
CE(sat)
=-0.4V(Max.) (IC=-4A)
High Current and High f
T
: IC=-8A, fT=130MHz.
Excellent Linearity of h
FE
High Speed Switching Time.
: f
T
=20nS (Typ.)
Complementary to KTC1804D/L
MAXIMUM RATING (Ta=25 )
DPAK
DIM MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10M
0.90 0.1O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
123
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10P
0.95 MAXQ
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-60 V
Emitter-Base Voltag
V
EBO
-6 V
Collector Current
DC
I
C
-8
A
Pulse
I
CP
-12
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
DIM MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K 2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27 2/4
KTA1204D/L
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification O:100~200, Y:140~280, GR:200~400.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-40V, IE=0
- - -1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -1
A
DC Current Gain
h
FE
(1) (Note) VCE=-2V, IC=-0.5A
100 - 400
h
FE
(2) VCE=-2V, IC=-6A
35 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-4A, IB=-0.2A
- -250 -500 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-4A, IB=-0.2A
- -0.95 -1.3 mV
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-60 V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, RBE=
-50 V
Emitter-base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-6 - - V
Gain-Bandwidth Product
f
T
VCE=-5V, IC=-1A
- 130 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 95 - pF
Switching
Time
Turn On Time
t
on
I
B1
6.25Ω
B1
I
CC
V =-25V
I
B2
I
B2
20µsec
-I =I =0.4A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
0
<
=
- 50 -
nS
Storage Time
t
stg
- 450 -
Fall Time
t
f
- 20 -
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