KEC KTA1045L, KTA1045D Datasheet

2003. 3. 27 1/2

SEMICONDUCTOR

TECHNICAL DATA

KTA1045D/L

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 5

LOW FREQUENCY POWER AMP,

MEDIUM SPEED SWITCHING APPLICATIONS

FEATURES

High breakdown voltage V

CEO

120V, high current 1A.

Low saturation voltage and good linearity of hFE.

Complementary to KTC2025D/L

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

(Note) : hFE(1) Classification Y:100 200, GR:160 320

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

-120 V

Collector-Emitter Voltage

V

CEO

-120 V

Emitter-Base Voltage

V

EBO

-5 V

Collector Current

I

C

-1
A

I

CP

-2

Collector Power

Dissipation

Ta=25

P

C

1.0
W

Tc=25

8

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut of Current

I

CBO

VCB=-50V, IE=0

- - -1

A

Emitter Cut of Current

I

EBO

VEB=-4V, IC=0

- - -1

A

Collector-Base Breakdown Voltage

V

(BR)CBO

IC=-10 A, IE=0

-120 - - V

Collector-Emitter Breakdown Voltage

V

(BR)CEO

IC=-1mA, IB=0

-120 - - V

Emitter-Base Breakdown Voltage

V

(BR)EBO

IE=-10 A, IC=0

-5 - - V

DC Current Gain

hFE(1) Note VCE=-5V, IC=-50mA

100 - 320

hFE(2) VCE=-5V, IC=-500mA

20 - -

Gain Bandwidth Product

f

T

VCE=-10V, IC=-50mA

- 110 - MHz

Output Capacitance

C

ob

VCB=-10V, IE=0, f=1MHz

- 30 - pF

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=-500mA, IB=-50mA

- -0.15 -0.4 V

Base-Emitter Saturation Voltage

V

BE(sat)

IC=-500mA, IB=-50mA

- -0.85 -1.2 V

Switching Time

Turn-on Time

t

on

- 80 -

nS

Turn-off Time

t

off

- 100 -

Storage Time

t

stg

- 600 -

A

C

Q

H

F

123

1. BASE

2. COLLECTOR

3. EMITTER

K

F

A
C

Q

H

G

F

F

123

I

J

D

B

M

E

P

DIM MILLIMETERS

A

B

C

D

E
F

H

I

O

J

K

L

L

6.60 0.2

6.10 0.2

5.0 0.2

1.10 0.2

2.70 0.2

2.30 0.1

1.00 MAX

2.30 0.2

0.5 0.1

2.00 0.20

0.50 0.10

0.91 0.10M

0.90 0.1O

1.00 0.10P

0.95 MAXQ

_

+
_

+

_

+

_

+
_

+
_

+

_

+

_

+
_

+
_

+

_

+

_

+

_

+

DPAK

I

J

D

B

K

E

P

L

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K 2.0 0.2

L

P

Q

6.60 0.2

6.10 0.2

5.0 0.2

1.10 0.2

9.50 0.6

2.30 0.1

0.76 0.1

1.0 MAX

2.30 0.2

0.5 0.1

0.50 0.1

1.0 0.1

0.90 MAX

_

+
_

+

_

+

_

+
_

+
_

+
_

+

_

+

_

+
_

+

_

+

_

+

1Ω

20µsec

100Ω

1uF 1uF

2V

V =-12V

CE

I =10I =-10I =500mA

C B1 B2

1. BASE

2. COLLECTOR

3. EMITTER

IPAK

I

B2

I

B1

24Ω

-12V

2003. 3. 27 2/2

KTA1045D/L

Revision No : 5

-1.6

Tc=25 C

-1.4

C

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

COLLECTOR CURRENT I (A)

0

-1 -2 -3 -4 -5 -6

0

COLLECTOR-EMITTER VOLTAGE V (V)

-1.4

V =-5V

-1.2

C

CE

-1.0

-0.8

-0.6

-0.4

-0.2

COLLECTOR CURRENT I (A)

0

0

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2

BASE-EMITTER VOLTAGE V (V)

200

ob

f=1MHz

100

50

30

V - I

CE C

V - I

C - V

ob CB

CBE

I =0mA

B

BE

-20

-15

-12

V - I

CE(sat) C

-1.0

I /I =10

CB

-0.5

-0.3

-10

-8

-6

-4

-2

CE

CE(sat)

-0.1

-0.05

-0.03

VOLTAGE V (V)

-0.01

COLLECTOR EMITTER SATURATION

-1 -3 -10 -30

COLLECTOR CURRENT I (mA)

-100 -300 -1k -3k

C

Pc - Ta

10

C

1

8

6

4

2

2

COLLECTOR DISSIPATION P (W)

0

0

20 40 60 80 100 120 140 160

AMBIENT TMMPERATURE Ta ( C)

Tc=25 C

1

2

Ta=25 C

10

500

300

100

50

30

10

5

5

-3-1

-10 -30 -100

COLLECTOR-BASE VOLTAGE V (V)

h - I

FE C

V =-5V

CE

-3-1 -30-10

-100 -300 -1k -5k

COLLECTOR CURRENT I (mA)

CE

SAFE OPERATING AREA

5
3

I MAX.(PULSED)

C

(CONTINUOUS)

I MAX.

C

C

1

0.5

0.3

*

DC OPERATION

Tc=25 C

1mS*

10mS*

100µS*

0.1

0.05

0.03

0.01

COLLECTOR CURRENT I (A)

0.005

C

SINGLE NONREPETITIVE

*

PULSE Tc=25 C

CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE

101

COLLECTOR-EMITTER VOLTAGE V (V)

100

CE

OUTPUT CAPACITANCE C (pF)

FE

DC CURRENT GAIN h