KEC KTA1040L, KTA1040D Datasheet

2003. 3. 27 1/2

SEMICONDUCTOR

TECHNICAL DATA

KTA1040D/L

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 5

GENERAL PURPOSE APPLICATION.

DPAK FOR SVRFACE MOUNT APPLICATIONS.

FEATURES

Low Collector Saturation Voltage

: V

CE(sat)

=-1.0V(Max.) at IC=-2A, IB=-0.2A.

Straight Lead (IPAK, "L" Suffix)

Complementary to KTC2020D/L.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

-60 V

Collector-Emitter Voltage

V

CEO

-60 V

Emitter-Base Voltage

V

EBO

-7 V

Collector Current

I

C

-3 A

Base Current

I

B

-0.5 A

Collector Power

Dissipation

Ta=25

P

C

1.0
W

Tc=25

20

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CBO

VCB=-60V, IE=0

- - -100

A

Emitter Cut-off Current

I

EBO

VEB=-7V, IC=0

- - -100

A

Collector-Emitter Breakdown Voltage

V

(BR)CEO

IC=-50mA, IB=0

-60 - - V

DC Current Gain

hFE(1)(Note) VCE=-5V, IC=-0.5A

100 - 300

hFE(2) VCE=-5V, IC=-3A

20 - -

Collector Emitter Saturation Voltage

V

CE(sat)

IC=-2A, IB=-0.2A

- -0.25 -1.0 V

Base-Emitter Voltage

V

BE

VCE=-5V, IC=-0.5A

- -0.7 -1.0 V

Transition Frequency

f

T

VCE=-5V, IC=-0.5A

- 30 - MHz

Collector Output Capacitance

C

ob

VCB=-10V, IE=0, f=1MHz

- 45 - pF

Switching Time

Turn-on Time

t

on

- 0.4 -

S

Storage Time

t

stg

- 1.7 -

Fall Time

t

f

- 0.5 -

Note : hFE(1) Classification Y:100~200, GR:150~300.

Q

H

F

123

1. BASE

2. COLLECTOR

3. EMITTER

Q

H

G

123

A

C

K

F

A
C

F

F

I

J

D

B

M

E

P

DIM MILLIMETERS

A

B

C

D

E
F

H

I

O

J

K

L

L

6.60 0.2

6.10 0.2
_

5.0 0.2

+

1.10 0.2

2.70 0.2

2.30 0.1

1.00 MAX

2.30 0.2
_

0.5 0.1

+
_

+

2.00 0.20
_

+

0.50 0.10

_

+

0.91 0.10M

0.90 0.1O
_

+

1.00 0.10P

0.95 MAXQ

_

+
_

+

_

+
_

+
_

+

_

+

_

+

DPAK

I

J

D

B

K

E

P

L

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K 2.0 0.2

L

P

Q

6.60 0.2

6.10 0.2

_

+

5.0 0.2

1.10 0.2

9.50 0.6

2.30 0.1

0.76 0.1

1.0 MAX

2.30 0.2

_

+

0.5 0.1

_

+

0.50 0.1

_

+

1.0 0.1

0.90 MAX

_

+
_

+

_

+
_

+
_

+
_

+

_

+

_

+

I

0

I

B1

20µsec

-I =I =0.2A

B2

B1

DUTY CYCLE

B2

<

1%

=

INPUT

I

I

1. BASE

2. COLLECTOR

3. EMITTER

IPAK

OUTPUT

B1

15Ω

B2

V =-30V

CC

2003. 3. 27 2/2

KTA1040D/L

Revision No : 5

I - V

-4

C

-3

-80

-70

-2

-1

COLLECTOR CURRENT I (A)

0

-1

-2 -3 -4 -5 -6

COLLECTOR-EMITTER VOLTAGE V (V)

h - I

1k

500

FE

300

100

50

DC CURRENT GAIN h

20

Tc=100 C

Tc=25 C

Tc=-25 C

COLLECTOR CURRENT I (A)

CEC

-60

FE C

COMMON EMITTER

V =-5V

CE

-50

COMMON
EMITTER
Tc=25 C

-40

-20

I =-10mA

B

CE

C

-30

V - I

CE(sat) C

-1

COMMON EMITTER
I /I =10

-0.5

C B

-0.3

CE(sat)

-0.1

-0.05

VOLTAGE V (V)

0

-0.02

COLLECTOR-EMITTER SATURATION

COLLECTOR CURRENT I (A)

Tc=100 C

-0.3-0.1-0.02

Tc=25 C

Tc=-25 C

-1 -3 -5

C

SAFE OPERATING AREA

-10

I MAX.

C

(PULSED) *

-5

I MAX.

C

-3

(CONTINUOUS)

C

100mS*

DC OPERATION

Tc=25 C

-1

-0.5

-0.3

COLLECTOR CURRENT I (A)

-3-1-0.02 -0.1 -0.3

-0.1

SINGLE NONREPETITIVE

*

PULSE Tc=25 C

CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE

-1 -3 -10 -100

COLLECTOR-EMITTER VOLTAGE V (V)

10mS*

1mS*

-30-5 -50

CE

CEO

V MAX.

100

R - t

th(t)

1k

(1) WITHOUT HEAT SINK

(2) INFINITE HEAT SINK

32

28

24

Pc - Ta

20

10

th(t)

R ( C/W)

(1) Ta=25 C

(2) Tc=25 C

1

0.1

TRANSIENT THERMAL RESISTANCE

-3 -2

10

10

-1

10 1 10

2

10

TIME t (sec)

16

C

P (W)

Tc=25 C

12

8

4

COLLECTOR POWER DISSIPATION

0

0

Ta=25 C

25 50 75 100 125 150 175

AMBIENT TEMPERATURE Ta ( C)

200