KEC KRX214U, KRX211U, KRX205U, KRX213U, KRX212U Datasheet
2002. 12. 18 1/3
SEMICONDUCTOR
TECHNICAL DATA
KRX205U
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A1
1.3 0.1A1
5
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
4. Q COMMON (EMITTER)
3. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
1
2
2. Q IN (BASE)
1
1
2
2
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
R1
COMMON
OUT
Q
1
1
IN
R1
COMMON
OUT
Q
2
2
IN
Q , Q
R1=4.7KΩ
1
Q1
23
65 4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
CHARACTERISTIC SYMBOL RATING UNIT
Collectoor-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
BE
Type Name
123
46
5
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collectoor-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100
2002. 12. 18 2/3
KRX205U
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 100
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100
DC Current Gain
h
FE
VCE=5V, IC=1
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10 , IB=0.5
- 0.1 0.3 V
Transition Frequency
fT *
VCE=10V, IC=5
- 250 -
Input Resistor
R
1
- 4.7 -
Switching
Time
Ries time
t
r
VO=5V, VIN=5V, RL=1k
- 0.025 -
Storage Time
t
stg
- 3.0 -
Fall Time
t
f
- 0.2 -
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100
DC Current Gain
h
FE
VCE=-5V, IC=-1
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-10 , IB=-0.5
- -0.1 -0.3 V
Transition Frequency
fT *
VCE=-10V, IC=-5
- 250 -
Input Resistor
R
1
- 4.7 -
Switching
Time
Ries time
t
r
VO=-5V, VIN=-5V, RL=1k
- 0.2 -
Storage Time
t
stg
- 2.0 -
Fall Time
t
f
- 0.3 -
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