KEC KRX205E Datasheet
SEMICONDUCTOR
KRX205E
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌIncluding two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
ᴌWith Built-in bias resistors.
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q
1
OUT
R1
IN
COMMON
Q
2
R1
IN
OUT
Q , Q
1
R1=4.7KΩ
COMMON
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q IN (BASE)
2
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
+
A
1.6 0.05
_
+
A1
1.0 0.05
_
B
1.6 0.05
+
_
B1
1.2 0.05
+
C
0.50
_
D
0.2 0.05
+
_
H
0.5 0.05
+
_
J
0.12 0.05
+
P5
TES6
Q1 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collectoor-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collectoor-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
1
Q2
23
V
CBO
V
CEO
V
EBO
I
C
V
CBO
V
CEO
V
EBO
I
C
Marking
5
Type Name
46
BE
123
50 V
50 V
5 V
100
-50 V
-50 V
-5 V
-100
Ὠ
Ὠ
Q1, Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2002. 1. 24 1/3
Revision No : 1
PC *
T
T
stg
200
j
150
-55ᴕ150
Ὥ
ᴱ
ᴱ
Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
KRX205E
V
I
CBO
I
EBO
h
FE
CE(sat)
fT *
R
t
r
t
stg
t
f
1
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
Ries time
Switching
Time
Storage Time
Fall Time
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
V
I
CBO
I
EBO
h
FE
CE(sat)
fT *
R
t
r
t
stg
t
f
1
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
Ries time
Switching
Time
Storage Time
Fall Time
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1Ὠ
IC=10Ὠ, IB=0.5Ὠ
VCE=10V, IC=5Ὠ
VO=5V, VIN=5V, RL=1kή
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1Ὠ
IC=-10Ὠ, IB=-0.5Ὠ
VCE=-10V, IC=-5Ὠ
VO=-5V, VIN=-5V, RL=1kή
- - 100
- - 100
120 - -
- 0.1 0.3 V
- 250 -
- 4.7 -
- 0.025 -
- 3.0 -
- 0.2 -
- - -100
- - -100
120 - -
- -0.1 -0.3 V
- 250 -
- 4.7 -
- 0.2 -
- 2.0 -
- 0.3 -
ὦ
ὦ
ὲ
ὶ
Ọ
ὦ
ὦ
ὲ
ὶ
Ọ
Note : * Characteristic of Transistor Only.
2002. 1. 24 2/3
Revision No : 1
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