2002. 7. 10 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC860E~KRC864E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100 nA
DC Current Gain
h
FE
VCE=5V, IC=1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10mA, IB=0.5mA
- 0.1 0.3 V
Transition Frequency
fT * VCE=10V, IC=5mA
- 250 - MHz
Input Resistor
KRC860E
R
1
- 4.7 -
k
KRC861E - 10 KRC862E - 100 KRC863E - 22 KRC864E - 47 -
TYPE KRC860E KRC861E KRC862E KRC863E KRC864E
MARK NK NM NN NO NP
ELECTRICAL CHARACTERISTICS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
R1
B
C
E
65 4
Q1
1
23
Q2
B
B1
C
A
A1
C
H
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
2
3
P
1
1
2
2
2
1
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
6
Type Name
54
123
2002. 7. 10 2/4
KRC860E~KRC864E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRC860E
t
r
VO=5V
V
IN
=5V
RL=1k
- 0.025 -
S
KRC861E - 0.03 KRC862E - 0.3 KRC863E - 0.06 KRC864E - 0.11 -
Storage Time
KRC860E
t
stg
- 3.0 KRC861E - 2.0 KRC862E - 6.0 KRC863E - 4.0 KRC864E - 5.0 -
Fall Time
KRC860E
t
f
- 0.2 KRC861E - 0.12 KRC862E - 2.0 KRC863E - 0.9 KRC864E - 1.4 -