SEMICONDUCTOR
KRC857E~KRC859E
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO.
KRC857E 10 47
KRC858E 22 47
KRC859E 47 22
R1(kή) R2(kή)
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q IN (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
+
A
1.6 0.05
_
+
A1
1.0 0.05
_
B
1.6 0.05
+
_
B1
1.2 0.05
+
C
0.50
_
D
0.2 0.05
+
_
H
0.5 0.05
+
_
J
0.12 0.05
+
P5
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
EQUIVALENT CIRCUIT (TOP VIEW)
KRC857Eᴕ859E
KRC857E
KRC859E 40,-15
KRC857Eᴕ859E
V
V
I
O
PD *
T
T
stg
O
I
j
TES6
65 4
Q1
Q2
1
23
50 V
30, -6
100 mA
200 mW
150
-55ᴕ150
VKRC858E 40, -7
ᴱ
ᴱ
MARK SPEC
Marking
6
Type Name
54
TYPE KRC857E KRC858E KRC859E
MARK NH NI NJ
123
2002. 1. 24 1/4
Revision No : 1
KRC857E~KRC859E
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
DC Current Gain
Output Voltage
Input Voltage (ON)
Input Votlage (OFF)
Transition Frequency
Input Current
Rise
Time
KRC857Eᴕ859E
I
O(OFF)
KRC857E
KRC858E 80 150 -
G
I
VO=50V, VI=0
VO=5V, IO=10mA
- - 500 nA
80 150 -
KRC859E 70 140 -
KRC857Eᴕ859E
KRC857E
V
V
O(ON)
I(ON)
IO=10mA, II=0.5mA
VO=0.2V, IO=5mA
- 0.1 0.3 V
- 1.2 1.8
KRC859E - 3.0 5.8
KRC857E
V
I(OFF)
VO=5V, IO=0.1mA
0.5 0.75 -
KRC859E 1.5 1.82 -
KRC857Eᴕ859E
KRC857E
fT * VO=10V, IO=5mA
I
I
VI=5V
- 200 - MHz
- - 0.88
KRC859E - - 0.16
KRC857E
KRC858E - 0.12 -
t
r
- 0.05 -
KRC859E - 0.26 -
VKRC858E - 1.8 2.6
VKRC858E 0.6 0.88 -
mAKRC858E - - 0.36
KRC857E
Switching
Time
Storage
Time
KRC858E - 2.4 -
KRC859E - 1.5 -
KRC857E
Fall
Time
KRC858E - 0.4 -
KRC859E - 0.41 -
Note : * Characteristic of Transistor Only.
t
stg
VO=5V, VIN=5V
R
=1kή
L
ỌS
- 0.36 -
t
f
- 2.0 -
2002. 1. 24 2/4
Revision No : 1