KEC KRC684T, KRC683T, KRC682T, KRC681T, KRC686T Datasheet
...
2002. 12. 5 1/2
SEMICONDUCTOR
TECHNICAL DATA
KRC681T~KRC686T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : V
EBO
=25V(Min)
High reverse hFE: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
25 V
Collector Current
I
C
300 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
hFEclassification
B
KRC681T MQB
KRC682T MRB
KRC683T MSB
KRC684T MTB
KRC685T MUB
KRC686T MVB
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
* Package mounted on a ceramic board (600 0.8 )
MARK SPEC
R1
B
C
E
54
Q1
1
Q2
23
E
15
G
2
F
A
3
G
C
L
1. Q IN (BASE)
1
2. Q , Q COMMON (EMITTER)
112
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
B
4
I
D
H
JJ
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
+
0.70 0.05
_
+
0.4 0.1
2.8+0.2/-0.3
_
+
1.9 0.2
0.95
_
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
TSV
Marking
h Rank
FE
Type Name
54
Lot No.
123
2002. 12. 5 2/2
KRC681T~KRC686T
Revision No : 3
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
IC=1mA
20 - - V
Collector-Base Breakdown Voltage
BV
CBO
IC=50 A
50 - - V
Emitter-Base Breakdown Voltage
BV
EBO
IE=50 A
25 - - V
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 0.1
A
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=30mA, IB=3mA
- - 0.1 V
DC Current Gain
h
FE
VCE=2V, IC=4mA
350 - 1200
Input Resistor
KRC681T
R
1
- 2.2 -
k
KRC682T - 4.7 -
KRC683T - 5.6 -
KRC684T - 6.8 -
KRC685T - 10 -
KRC686T - 22 -
Transition Frequency
f
T *
VCE=6V, IC=4mA,
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 4.8 - pF
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Characteristic of Transistor Only.
Note) h
FE
Classification B:350 1200
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