SEMICONDUCTOR
KRC657E~KRC659E
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO.
KRC657E 10 47
KRC658E 22 47
KRC659E 47 22
R1(kή) R2(kή)
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
C
A
A1
2
C
3
P
H
1. Q IN (BASE)
1
2. Q , Q COMMON (EMITTER)
112
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
5
DIM MILLIMETERS
A
A1
B
B1
D
4
P
C
D
H
P5
J
_
1.6 0.05
+
_
+
1.0 0.05
_
+
1.6 0.05
_
+
1.2 0.05
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
J
+
0.12 0.05
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC657Eᴕ659E
KRC657E
Input Voltage
KRC659E 40,-15
Output Current
Power Dissipation
Junction Temperature
KRC657Eᴕ659E
Storage Temperature Range
* Total Rating.
MARK SPEC
TYPE KRC657E KRC658E KRC659E
V
V
I
O
PD *
T
T
stg
O
I
j
Marking
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1
1
50 V
30, -6
100 mA
200 mW
150
-55ᴕ150
Type Name
54
Q2
23
ᴱ
ᴱ
VKRC658E 40, -7
MARK NH NI NJ
123
2002. 1. 24 1/4
Revision No : 1
KRC657E~KRC659E
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
DC Current Gain
Output Voltage
Input Voltage (ON)
Input Votlage (OFF)
Transition Frequency
Input Current
Rise
Time
KRC657Eᴕ659E
I
O(OFF)
KRC657E
KRC658E 80 150 -
G
I
VO=50V, VI=0
VO=5V, IO=10mA
- - 500 nA
80 150 -
KRC659E 70 140 -
KRC657Eᴕ659E
KRC657E
V
V
O(ON)
I(ON)
IO=10mA, II=0.5mA
VO=0.2V, IO=5mA
- 0.1 0.3 V
- 1.2 1.8
KRC659E - 3.0 5.8
KRC657E
V
I(OFF)
VO=5V, IO=0.1mA
0.5 0.75 -
KRC659E 1.5 1.82 -
KRC657Eᴕ659E
KRC657E
fT * VO=10V, IO=5mA
I
I
VI=5V
- 200 - MHz
- - 0.88
KRC659E - - 0.16
KRC657E
KRC658E - 0.12 -
t
r
- 0.05 -
KRC659E - 0.26 -
VKRC658E - 1.8 2.6
VKRC658E 0.6 0.88 -
mAKRC658E - - 0.36
KRC657E
Switching
Time
Storage
Time
KRC658E - 2.4 -
KRC659E - 1.5 -
KRC657E
Fall
Time
KRC658E - 0.4 -
KRC659E - 0.41 -
Note : * Characteristic of Transistor Only.
t
stg
VO=5V, VIN=5V
R
=1kή
L
ỌS
- 0.36 -
t
f
- 2.0 -
2002. 1. 24 2/4
Revision No : 1