KEC KRC283M, KRC282M, KRC286M, KRC285M, KRC281M Datasheet
...
2002. 12. 5 1/2
SEMICONDUCTOR
TECHNICAL DATA
KRC281M~KRC286M
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : V
EBO
=25V(Min)
High reverse hFE: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
25 V
Collector Current
I
C
300 mA
Collector Power Dissipation
P
C
400 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
R1
B
C
E
B
A
DIM MILLIMETERS
F
H
C
J
1
L
EE
2
M
3
N
1. EMITTER
2. COLLECTOR
3. BASE
G
D
K
O
A
B
C
D
E
F
G
14.00 0.50
H
J
K
L
M
N
O0.75
3.20 MAX
4.30 MAX
0.55 MAX
_
+
2.40 0.15
1.27
2.30
_
+
0.60 MAX
1.05
1.45
25
0.80
0.55 MAX
TO-92M
2002. 12. 5 2/2
KRC281M~KRC286M
Revision No : 1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
IC=1mA
20 - - V
Collector-Base Breakdown Voltage
BV
CBO
IC=50 A
50 - - V
Emitter-Base Breakdown Voltage
BV
EBO
IE=50 A
25 - - V
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 0.1
A
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=30mA, IB=3mA
- - 0.1 V
DC Current Gain
h
FE
VCE=2V, IC=4mA
350 - 1200
Input Resistor
KRC281M
R
1
- 2.2 -
k
KRC282M - 4.7 -
KRC283M - 5.6 -
KRC284M - 6.8 -
KRC285M - 10 -
KRC286M - 22 -
Transition Frequency
f
T *
VCE=6V, IC=4mA,
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 4.8 - pF
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Characteristic of Transistor Only.
Note) h
FE
Classification B:350 1200
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