KEC KRC235S, KRC234S Datasheet
SEMICONDUCT
KRC231S~KRC235S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER
CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
H
G
A
N
C
B
D
1.30 MAX
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
R1
C
E
B
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
15 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
600 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
TYPE KRC231S KRC232S KRC233S KRC234S KRC235S
MARK NW NY NZ NNA NNB
Type Name
Marking
Lot No.
Lot No.
Type Name
OR
TECHNICAL DATA
E
LL
MILLIMETERS
2
1
1. EMITTER
2. BASE
3. COLLECTOR
3
PP
M
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P7
J
_
+
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
MARK SPEC
SOT-23
2002. 5. 14 1/3
KRC231S~KRC235S
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
- 2.2 -
kΩ
KRC232S - 5.6 -
KRC233S - 10 -
KRC234S - 4.7 -
Transition Frequency
fT*
VCE=10V, IE=-50mA,
f=100MHz
- 200 - MHz
On Resistance Ron
f=1kHz, IB=1mA, VIN=0.3V
- 0.6 -
Ω
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
BV
BV
BV
I
V
CE(sat)
h
KRC231S
Input Resistor
KRC235S - 6.8 -
CEO
CBO
EBO
CBO
FE
R
IC=1mA
IC=50μA
IE=50μA
VCB=30V
IC=50mA, IB=2.5mA
VCE=5V, IC=50mA
15 - - V
30 - - V
5.0 - - V
- - 0.5
- 40 80 mV
200 350 800 -
μA
1
2002. 5. 14 2/3
Revision No : 3
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