2002. 7. 9 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA760U~KRA764U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage TemperatureRange
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
DC Current Gain
h
FE
VCE=-5V, IC=-1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-10mA, IB=-0.5mA
- -0.1 -0.3 V
Transition Frequency
fT * VCE=-10V, IC=-5mA
- 250 - MHz
Input Resistor
KRA760U
R
1
- 4.7 -
k
KRA761U - 10 KRA762U - 100 KRA763U - 22 KRA764U - 47 -
TYPE KRA760U KRA761U KRA762U KRA763U KRA764U
MARK PK PM PN PO PP
EQUIVALENT CIRCUIT (TOP VIEW)
R1
B
C
E
65 4
Q1
1
23
Q2
B
B1
DIM MILLIMETERS
1
C
A
2
A1
C
3
H
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
G
1
1
2
2
2
1
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
+
1.3 0.1A1
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
US6
Type Name
6
54
123
2002. 7. 9 2/4
KRA760U~KRA764U
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise
Time
KRA760U
t
r
VO=-5V
V
IN
=-5V
RL=1k
- 0.2 -
S
KRA761U - 0.065 KRA762U - 0.4 KRA763U - 0.1 KRA764U - 0.15 -
Storage
Time
KRA760U
t
stg
- 2.0 KRA761U - 1.7 KRA762U - 3.0 KRA763U - 2.0 KRA764U - 1.5 -
Fall
Time
KRA760U
t
f
- 0.3 KRA761U - 0.3 KRA762U - 1.7 KRA763U - 0.8 KRA764U - 1.5 -