2002. 7. 9 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA760E~KRA764E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage TemperatureRange
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
DC Current Gain
h
FE
VCE=-5V, IC=-1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-10mA, IB=-0.5mA
- -0.1 -0.3 V
Transition Frequency
fT * VCE=-10V, IC=-5mA
- 250 - MHz
Input Resistor
KRA760E
R
1
- 4.7 -
k
KRA761E - 10 KRA762E - 100 KRA763E - 22 KRA764E - 47 -
TYPE KRA760E KRA761E KRA762E KRA763E KRA764E
MARK PK PM PN PO PP
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
* Total Rating.
Note : * Characteristic of Transistor Only.
R1
B
C
E
65 4
Q1
1
23
Q2
B
B1
C
A
A1
C
H
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
2
3
P
1
1
2
2
2
1
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
Type Name
6
54
123
2/4
KRA760E~KRA764E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise
Time
KRA760E
t
r
VO=-5V
V
IN
=-5V
RL=1k
- 0.2 -
S
KRA761E - 0.065 KRA762E - 0.4 KRA763E - 0.1 KRA764E - 0.15 -
Storage
Time
KRA760E
t
stg
- 2.0 KRA761E - 1.7 KRA762E - 3.0 KRA763E - 2.0 KRA764E - 1.5 -
Fall
Time
KRA760E
t
f
- 0.3 KRA761E - 0.3 KRA762E - 1.7 KRA763E - 0.8 KRA764E - 1.5 -
2002. 7. 9
2002. 7. 9 3/4
KRA760E~KRA764E
Revision No : 2
KRA760E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3 -1 -3
-0.1
COLLECTOR CURRENT I (mA)
KRA761E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3-0.1
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
CE
-10 -30 -100
C
V =-5V
CE
-10-3-1
-100-30
V - I
KRA760E
-2
-1
I /I =20
C
B
CE(sat)
-0.5
-0.3
CE(sat)
-0.1
-0.1
Ta=100 C
Ta=-25 C
-0.3
Ta=25 C
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATIN
COLLECTOR CURRENT I (mA)
V - I
KRA761E
-2
-1
I /I =20
C
B
CE(sat)
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATIN
Ta=100 C
Ta=-25 C
-0.3-0.1
Ta=25 C
-1 -3 -10
C
-10-3-1
C
C
-100-30
-30 -100
COLLECTOR CURRENT I (mA)
KRA762E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.1
-0.3
COLLECTOR CURRENT I (mA)
h - I
Ta=100 C
Ta=-25 C
-1
FE C
Ta=25 C
C
V =-5V
CE
-10
-3 -100-30
C
COLLECTOR CURRENT I (mA)
V - I
KRA762E
-2
I /I =20
BC
CE(sat)
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATIN
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1 -1
-0.3
COLLECTOR CURRENT I (mA)
C
C
-3 -10 -100-30
C
2002. 7. 9 4/4
KRA760E~KRA764E
Revision No : 2
KRA763E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.1
-0.3
COLLECTOR CURRENT I (mA)
KRA764E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3
-0.1
h - I
Ta=100 C
Ta=-25 C
-1
h - I
Ta=100 C
Ta=-25 C
-1
CFE
Ta=25 C
V =-5V
CE
-10
-3 -100-30
C
CFE
Ta=25 C
V =-5V
CE
-10
-3 -100-30
V - I
KRA763E
-2
-1
I /I =20
BC
CE(sat) C
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
-0.01
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1 -1
-0.3
COLLECTOR CURRENT I (mA)
V - I
KRA764E
-2
I /I =20
BC
CE(sat) C
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATIN
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1 -1
-0.3
-3 -10 -100-30
C
-3 -10 -100-30
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
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