2002. 7. 9 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA560U~KRA564U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage TemperatureRange
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
DC Current Gain
h
FE
VCE=-5V, IC=-1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-10mA, IB=-0.5mA
- -0.1 -0.3 V
Transition Frequency
fT * VCE=-10V, IC=-5mA
- 250 - MHz
Input Resistor
KRA560U
R
1
- 4.7 -
k
KRA561U - 10 KRA562U - 100 KRA563U - 22 KRA564U - 47 -
TYPE KRA560U KRA561U KRA562U KRA563U KRA564U
MARK PK PM PN PO PP
EQUIVALENT CIRCUIT (TOP VIEW)
R1
B
C
E
54
Q1
1
23
Q2
B
B1
1
C
2
A
A1
C
3
H
G
1. Q IN (BASE)
1
2. Q , Q COMMON (EMITTER)
112
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
5
D
4
T
DIM MILLIMETERS
A
B
B1
C
D
G
H
T
_
+
2.00 0.20
_
1.3 0.1A1
+
_
+
2.1 0.1
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
USV
Type Name
54
123
2/4
KRA560U~KRA564U
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise
Time
KRA560U
t
r
VO=-5V
V
IN
=-5V
RL=1k
- 0.2 -
S
KRA561U - 0.065 KRA562U - 0.4 KRA563U - 0.1 KRA564U - 0.15 -
Storage
Time
KRA560U
t
stg
- 2.0 KRA561U - 1.7 KRA562U - 3.0 KRA563U - 2.0 KRA564U - 1.5 -
Fall
Time
KRA560U
t
f
- 0.3 KRA561U - 0.3 KRA562U - 1.7 KRA563U - 0.8 KRA564U - 1.5 -
2002. 7. 9