KEC KMB2D0N60SA Schematic [ru]
2008. 2. 25 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB2D0N60SA
N-Ch Trench MOSFET
Revision No : 1
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
V
DSS
=60V, ID=2A
Drain-Source ON Resistance
R
DS(ON)
=160m (Max.) @ VGS=10V
R
DS(ON)
=220m (Max.) @ VGS=4.5V
Super High Dense Cell Design
MAXIMUM RATING (Ta=25 )
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
DC@Ta=25
I
D
2.0
A
DC@Ta=70
1.6
Pulsed
I
DP
10
Drain-Source-Diode Forward Current
I
S
1.0 A
Drain Power Dissipation
Ta=25
P
D
1.25
W
Ta=70
0.8
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
100
/W
Note>*Surface Mounted on 1” × 1” FR4 Board, t≤5sec
E
B
LL
DIM MILLIMETERS
A
B
C
A
G
2
H
1
PP
N
C
M
K
D
3
D
E
G1.90
H
J
K
L
M
N
P7
J
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
KND
D
3
2
1
3
2
1
GS
2008. 2. 25 2/5
KMB2D0N60SA
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
IDS=250 A, VGS=0V,
60 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=60V
- - 0.5
A
VGS=0V, VDS=60V, Tj=55
- - 10
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1.5 - - V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10V, ID=2A
- 125 160
m
VGS=4.5V, ID=1.7A
- 155 220
On-State Drain Current
I
D(ON)
*
VGS=10V, VDS4.5V
6 - -
A
VGS=4.5V, VDS4.5V
4 - -
Forward Transconductance
gfs* VDS=4.5V, ID=2.0A
- 4.6 - S
Dynamic
Input Capaclitance
C
iss
VDS=30V, f=1MHz, VGS=0V
- 240 -
pFOuput Capacitance
C
oss
- 30 -
Reverse Transfer Capacitance
C
rss
- 16 -
Total Gate Charge
Qg*
VDS=30V, VGS=10V, ID=2A
- 4.8 10
nCGate-Source Charge
Qgs*
- 0.8 -
Gate-Drain Charge
Qgd*
- 1.0 -
Turn-On Delat Time
t
d(on)
*
VDD=30V, VGS=4.5V
I
D
=1A, RG=6
- 7 15
ns
Turn-On Rise Time
tr*
- 10 20
Turn-Off Deley Time
t
d(off)
*
- 17 35
Turn-Off Fall Time
tf*
- 6 15
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
* VGS=0V, IS=1A
- 0.77 1.2 V
NOTE 1> * Pulse Test : Pulse width <300 , Duty cycle < 2%
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