2002. 3. 7 1/3
SEMICONDUCTOR
TECHNICAL DATA
KIC7WZ32FK
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
Revision No : 1
2 INPUT OR GATE
FEATURES
High output drive : 24mA(min.) @VCC=3V.
Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF.
Operation voltage range : V
CC(opr)
=1.65~5.5V.
Latch-up performance : 200V or more (EIAJ)
:
2000V or more (MIL)
Power down protection is provided on all inputs and outputs.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Power Supply Voltage
V
CC
-0.5~6 V
DC Input Voltage
V
IN
-0.5~6 V
DC Output Voltage
V
OUT
-0.5~6 V
Input Diode Current
I
IK
-20 mA
Output Diode Current
I
OK
-20 mA
DC Output Current
I
OUT
50
mA
DC VCC/ground Current I
CC
50
mA
Power Dissipation
P
D
200 mW
Storage Temperature Range
T
stg
-55 150
Lead Temperature (10s)
T
L
260
MARKING
B
C
DIM MILLIMETERS
1
D
D
A
D
45
F
H
A
8
B
E
C
D
E
0.2+0.05/-0.04
F
G
H
G
_
+
2.0 0.1
_
+
3.1 0.1
_
+
2.3 0.1
0.5
_
0.7 0.1
+
_
0.12 0.04
+
0 ~ 0.1
Type Name
Z32
Lot No.
US8
PIN CONNECTION(TOP VIEW)
1
1A
1B
2Y
GND
2
3
4
8
V
CC
1Y
7
6
2B
2A
5
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KIC7WZ32FK
Revision No : 1
Truth Table
A B Y
L L L
L H H
H L H
H H H
Logic Diagram
Recommended Operating Conditions
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage
V
CC
1.65~5.5
V
1.5~5.5 (Note1)
Input Voltage
V
IN
0~5.5 V
Output Voltage
V
OUT
0~5.5 (Note2)
V
0~V
CC
(Note3)
Operating Temperature
T
opr
-40~85
Input Rise and Fall Time
dt/d
v
0~20 (VCC=1.8V 0.15V, 2.5V 0.2V)
ns/V
0~10 (VCC=3.3V 0.3V)
0~5 (VCC=5.5V 0.5V)
Note1 : Data retention only.
Note2 : V
CC
=0V.
Note3 : High or low state
IN A
IN B
1
OUT Y
2002. 3. 7 3/3
KIC7WZ32FK
Revision No : 1
ELECTRICAL CHARACTERISTICS
DC Characteristics
AC Characteristics (unless otherwise specified, Input : tr=tf=3ns)
CHARACTERISTIC SYMBOL
TEST CONDITION
Ta=25 Ta=-40~85
UNIT
VCC(V)
MIN. TYP. MAX. MIN. MAX.
Input
Voltage
High Level
V
IH
-
1.65~1.95
0.75
V
CC
- -
0.75
V
CC
-
V
2.3~5.5
0.7 V
CC
- -
0.7 V
CC
-
Low Level
V
IL
-
1.65~1.95 - -
0.25
V
CC
-
0.25
V
CC
2.3~5.5
- -
0.3 V
CC
-
0.3 V
CC
Output
Voltage
High Level
V
OH
VIN=
V
IH
or V
IL
IOH=-100 A
1.65 1.55 1.65 - 1.55 -
V
2.3 2.2 2.3 - 2.2 -
3.0 2.9 3.0 - 2.9 -
4.5 4.4 4.5 - 4.4 -
IOH=-4mA
1.65 1.29 1.52 - 1.29 -
IOH=-8mA
2.3 1.9 2.15 - 1.9 -
IOH=-16mA
3.0 2.4 2.8 - 2.4 -
IOH=-24mA
3.0 2.3 2.68 - 2.3 -
IOH=-32mA
4.5 3.8 4.2 - 3.8 -
Low Level
V
OL
VIN=V
IL
IOH=100 A
1.8 - 0 0.1 - 0.1
V
2.3 - 0 0.1 - 0.1
3.0 - 0 0.1 - 0.1
4.5 - 0 0.1 - 0.1
IOH=4mA
1.65 - 0.08 0.24 - 0.24
IOH=8mA
2.3 - 0.1 0.3 - 0.3
IOH=16mA
3.0 - 0.15 0.4 - 0.4
IOH=24mA
3.0 - 0.22 0.55 - 0.55
IOH=32mA
4.5 - 0.22 0.55 - 0.55
Input Leakage Current
I
IN
VIN=5.5V or GND
0~5.5 - -
1
-
10 A
Power Off Leakage Current
I
OFF
VINor V
OUT
=5.5V
0.0 - - 1 - 10
A
Quiescent Supply Current
I
CC
VIN=5.5V or GND
1.65~5.5 - - 1 - 10
A
CHARACTERISTIC SYMBOL
TEST CONDITION
Ta=25 Ta=-40~85
UNIT
VCC(V)
MIN. TYP. MAX. MIN. MAX.
Propagation delay time
t
PLH
t
PHL
CL=15pF, RL=1M
1.8 0.15
2.0 5.8 10.5 2.0 11.0
ns
2.5 0.2
1.0 3.5 5.8 1.0 6.2
3.3 0.3
0.8 2.6 3.9 0.8 4.3
5.0 0.5
0.5 2.6 3.1 0.5 3.3
CL=50pF, RL=500
3.3 0.3
1.2 3.2 4.8 1.2 5.2
ns
5.0 0.5
0.8 2.4 3.7 0.8 4.0
Input Capacitance
C
IN
- 0~5.5 - 3.0 - - - pF
Power Dissipation
Capacitance
C
PD
(Note)
3.3 - 20 - - pF
5.5 - 26 - - -
Note : CPDis defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption
without load. Average operating current can be obtained by the equation : I
CC(opr)=CPDVCCfIN+ICC
/2
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