KEC KDV350E Datasheet

SEMICONDUCTOR

TECHNICAL DATA

VCO.

FEATURES

ᴌLow Series Resistance : rS=0.50ή(Max.)

ᴌSmall Package. (ESC Package)

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC SYMBOL RATING UNIT

Reverse Voltage

Junction Temperature

Storage Temperature Range

V

R

T

j

T

stg

-55ᴕ150

15 V

150

ᴱ

ᴱ

KDV350E

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

C

1

CATHODE MARK

2

D

1. ANODE

2. CATHODE

A

B

E

F

DIM MILLIMETERS

A

B

C

D

E

_
+

1.60 0.10
_

+

1.20 0.10
_

+

0.80 0.10
_

+

0.30 0.05

_
+

0.60 0.10

_
+

0.13 0.05F

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Reverse Voltage

Reverse Current

Capacitance

Capacitance Ratio K

Series Resistance

V

R

I

R

C

1V

C

4V

r

S

IR=1ỌA

VR=15V

VR=1V, f=1MHz

VR=4V, f=1MHz

C1V/C4V, f=1MHz

VR=1V, f=470MHz

ESC

15 - - V

- - 10 nA

15.0 - 17.5

5.3 - 6.3

2.8 - -

- - 0.5

pF

ή

Marking

Type Name

KU

2000. 3. 7 1/2

Revision No : 0

KDV350E

-11

10

R

-12

10

REVERSE CURRENT I (A)

-13

10

04

REVERSE VOLTAGE V (V)

0.4

I - V

RR

81216

R

r - V

sR

f=1MHz

25

20

15

10

5

CAPACITANCE C (pF)

0

-1

REVERSE VOLTAGE V (V)

C - V

R

1.010

f=1MHz

10

R

s

0.3

0.2

0.1

SERIES RESISTANCE r (Ω)

0

103.0

5.0

REVERSE VOLTAGE V (V)

R

50301.00.5

2000. 3. 7 2/2

Revision No : 0