KEC KDV350 Datasheet
VCO.
SEMICONDUCTOR
TECHNICAL DATA
KDV350
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
ᴌLow Series Resistance : rS=0.50ή(Max.)
ᴌSmall Package.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
T
j
T
stg
-55ᴕ150
15 V
150
ᴱ
ᴱ
B
1
CATHODE MARK
2
D
M
M
1. ANODE
2. CATHODE
G
K
A
E
J
DIM
MILLIMETERS
A
B
C
D
0.30+0.06/-0.04
E
F
G
H
I
J
K
L
M
C
I
_
2.50 0.1
+
_
+
1.25 0.05
_
+
0.90 0.05
_
+
1.70 0.05
MIN 0.17
_
+
0.126 0.03
0~0.1
1.0 MAX
_
+
0.15 0.05
_
+
0.4 0.05
2 +4/-2
4~6
L
H
F
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio K
Series Resistance
V
R
I
R
C
1V
C
4V
r
S
IR=1ỌA
VR=15V
VR=1V, f=1MHz
VR=4V, f=1MHz
C1V/C4V, f=1MHz
VR=1V, f=470MHz
15 - - V
- - 10 nA
15.0 - 17.5
5.3 - 6.3
2.8 - -
- - 0.5
Marking
Type Name
KU
pF
ή
2001. 6. 11 1/2
Revision No : 1
KDV350
-11
10
R
-12
10
REVERSE CURRENT I (A)
-13
10
04
REVERSE VOLTAGE V (V)
0.4
s
0.3
I - V
RR
81216
R
r - V
s R
f=1MHz
25
20
15
10
5
CAPACITANCE C (pF)
0
-1
REVERSE VOLTAGE V (V)
C - V
R
1.010
f=1MHz
10
R
0.2
0.1
SERIES RESISTANCE r (Ω)
0
103.0
5.0
REVERSE VOLTAGE V (V)
R
50301.00.5
2001. 6. 11 2/2
Revision No : 1
Loading...