KEC KDV287E Datasheet
UHF SHF TUNING.
SEMICONDUCTOR
TECHNICAL DATA
KDV287E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.)
ᴌLow Series Resistance : r
=1.9ή(Typ.)
S
ᴌExcellent C-V Characteristics, and Small Tracking Error.
ᴌUseful for Small Size Tuner.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
V
RM
T
T
stg
j
35(RL=10kή)
125
-55ᴕ125
30 V
ᴱ
ᴱ
C
1
A
CATHODE MARK
2
V
1. ANODE
2. CATHODE
B
D
E
F
DIM MILLIMETERS
A
B
C
D
E
_
+
1.60 0.10
_
+
1.20 0.10
_
+
0.80 0.10
_
+
0.30 0.05
_
+
0.60 0.10
_
+
0.13 0.05F
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
Note : Available in matched group for capacitance to 6%.
C(Max.)-C(Min.)
C(Min.)
⏊0.06
(VR=2~25V)
V
I
C
C
25V
C2V/C
r
R
R
2V
25V
S
IR=1ỌA
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
30 - - V
- - 10 nA
4.2 - 5.7 pF
0.53 - 0.68 pF
7.3 - - -
- 1.9 2.3
Marking
Type Name
PU
ή
2000. 3. 24 1/1
Revision No : 0
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