KEC KDV275 Datasheet
2003 1. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV275
Revision No : 0
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V=3.4(Min.)
Low Series Resistance
Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
V
R
28 V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
IR=10 A
20 - - V
Reverse Current
I
R
VR=16V
- - 5 nA
Capacitance
C
1V
VR=1V, f=1MHz
15.40 16.60 17.90
pF
C
2V
VR=2V, f=1MHz
8.50 10.20 11.90
C
4V
VR=4V, f=1MHz
3.60 4.30 5.05
Capacitance Ratio K
C1V/C4V, f=1MHz
3.4 - -
Series Resistance
r
S
CT=8pF, f=470MHz
- - 0.7
CLASSIFICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE (C2V)
UNIT
A
8.5 9.15
pF
B 9.05~9.85 pF
C
9.75 10.65
pF
D 10.55~11.35 pF
E 11.25~11.90 pF
B
1
CATHODE MARK
2
D
M
M
1. ANODE
2. CATHODE
G
K
A
E
J
DIM MILLIMETERS
A
B
C
D
0.30+0.06/-0.04
E
F
G
H
I 1.0 MAX
J
K
M4~6
C
I
_
2.50 0.1
+
_
+
1.25 0.05
_
+
0.90 0.05
_
+
1.70 0.05
MIN 0.17
_
+
0.126 0.03
0~0.1
_
0.15 0.05
+
_
+
0.4 0.05
2 +4/-2L
L
H
F
USC
Marking
Type Name
Grade
C
2003 1. 27 2/2Revision No : 0
KDV275
K
30
T
10
5
CAPACITANCE C (pF)
3
01234
REVERSE VOLTAGE V (V)
500
300
f=50MHz
100
C - V
Q - V
f=100MHz
I - V
RT
Ta=25 C
f=1MHz
100p
R
10p
RR
Ta=85 C
Ta=55 C
1p
Ta=25 C
100f
REVERSE CURRENT I (A)
10f
0
R
R
1
s
48
REVERSE VOLTAGE V (V)
r - f
V =4V
R
Ta=25 C
12 16
R
s
20
0.7
50
f=300MHz
30
FIGURE OF MERIT Q
10
0
1234
REVERSE VOLTAGE V (V)
C(Ta)/C(25 C) - V
1.10
1.06
1.02
0.98
C(Ta)/C(25 C)
0.94
VARIATION OF CAPACITANCE
0.90
0
Ta=
8
5 C
Ta=55 C
Ta=
25 C
Ta=
-15 C
Ta=-55 C
1234
REVERSE VOLTAGE V (V)
f=470MHz
R
R
SERIES RESISTANCE r (Ω)
0.5
50 300 1
100
500
FREQUENCY f (MHz)
R
∆C/Ta - V
R
3K
1k
500
300
∆C/Ta (ppm/ C)
Ta=-55 C~+85 C
100
0
1234
REVERSE VOLTAGE V (V)
f=1MHz
R
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