KEC KDV273E Datasheet
SEMICONDUCTOR
VCO FOR UHF/VHF BAND.
TECHNICAL DATA
KDV273E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
ᴌHigh Capacitance Ratio : C1V/C4V=2.0(Typ.)
ᴌLow Series Resistance : r
=0.39ή(Typ.)
s
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
T
j
T
stg
-55ᴕ150
10 V
150
ᴱ
ᴱ
C
1
CATHODE MARK
2
D
1. ANODE
2. CATHODE
E
A
B
F
DIM MILLIMETERS
A
B
C
D
E
_
+
1.60 0.10
_
+
1.20 0.10
_
+
0.80 0.10
_
+
0.30 0.05
_
+
0.60 0.10
_
+
0.13 0.05F
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
V
R
I
R
C
1V
C
4V
IR=1ỌA
VR=10V
VR=1V, f=1MHz
VR=4V, f=1MHz
10 - - V
- - 10 nA
15 16 17
7.3 8.0 8.7
Capacitance Ratio K - 1.8 2.0 -
Series Resistance
r
S
VR=1V, f=470MHz
- 0.39 0.5
Marking
Type Name
5U
pF
ή
2001. 6. 11 1/2
Revision No : 0
KDV273E
100
T
10
CAPACITANCE C (pF)
1
012345678910
REVERSE VOLTAGE V (V)
C - V
T
I - V
R
f=1MHz
Ta=25 C
R
1K
Ta=25 C
R
100
10
REVERSE CURRENT I (pA)
1
0
2 4 6 8 10 12
REVERSE VOLTAGE V (V)
RR
R
2001. 6. 11 2/2Revision No : 0
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