KEC KDV262E Datasheet
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=12.5(Typ.)
ᴌLow Series Resistance : r
ᴌExcellent C-V Characteristics, and Small Tracking Error.
ᴌUseful for Small Size Tuner.
=0.6ή(Typ.)
S
KDV262E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
CATHODE MARK
2
D
A
B
E
F
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
V
RM
T
j
T
stg
34 V
36 (RL=10kή)
125
-55ᴕ125
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
⏊0.02
V
I
C
C
25V
C2V/C
C
25V/C28V
r
R
R
2V
25V
S
V
ᴱ
ᴱ
IR=1ỌA
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
DIM MILLIMETERS
A
B
C
D
1. ANODE
2. CATHODE
E
ESC
34 - - V
- - 10 nA
33 35.5 38 pF
2.6 2.85 3.0 pF
12.0 12.5 -
1.03 - -
- 0.6 0.8
_
+
1.60 0.10
_
+
1.20 0.10
_
+
0.80 0.10
_
+
0.30 0.05
_
+
0.60 0.10
_
+
0.13 0.05F
-
ή
(VR=2~25V)
Marking
Type Name
QU
2000. 3. 24 1/2
Revision No : 0
KDV262E
500
V
100
50
CAPACITANCE C (pF)
10
0
REVERSE VOLTAGE V (V)
1.0
0.8
s
0.6
C - V
R
V
f=1MHz
Ta=25 C
10 20 30
R
r - V
s
R
f=470MHz
Ta=25 C
1000p
=75 C
a
R
100p
T
a
T
10p
1p
REVERSE CURRENT I (A)
0.1p
0
8
REVERSE VOLTAGE V (V)
3
2
1
I - V
RR
C
=50
a=25 C
T
16 24 32
R
C - Ta
f=1MHz
V =2V
R
10V
0.4
0
25V
20V
-1
0.2
SERIES RESISTANCE r (Ω)
0
1 3 10 30
REVERSE VOLTAGE V (V)
5
R
-2
CAPACITANCE CHANGE RATIO C (%)
-40
-20 0 20 40 60 80
AMBIENT TEMPERATURE Ta ( C)
2/22000. 3. 24 Revision No : 0
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