KEC KDV257E Datasheet
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
ᴌLow Series Resistance : rs=0.50ή(Max.)
KDV257E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
CATHODE MARK
A
B
E
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
T
j
T
stg
-55ᴕ150
10 V
150
ᴱ
ᴱ
2
D
1. ANODE
2. CATHODE
DIM MILLIMETERS
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
V
R
I
R
C
1V
C
2V
Capacitance Ratio K - 1.3 - -
IR=1ỌA
VR=10V
VR=1V, f=1MHz
VR=2V, f=1MHz
10 - - V
- - 10 nA
19.5 - 23.5
14.3 - 17.6
F
A
B
C
D
E
_
+
1.60 0.10
_
+
1.20 0.10
_
+
0.80 0.10
_
+
0.30 0.05
_
+
0.60 0.10
_
+
0.13 0.05F
pF
Series Resistance
r
S
VR=1V, f=470MHz
- - 0.5
Marking
ή
Type Name
A E
2001. 6. 11 1/2
Revision No : 0
KDV257E
100
Ta=25 C
R
10
REVERSE CURRENT I (pA)
1
0246810
REVERSE VOLTAGE V (V)
I - V
R
C - V
R
100
10
CAPACITANCE C (pF)
1
0246810
R
REVERSE VOLTAGE V (V)
R
f=1MHz
Ta=25 C
R
2001. 6. 11 2/2
Revision No : 0
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