KEC KDV245E Datasheet

2003. 1. 27 1/2

SEMICONDUCTOR

TECHNICAL DATA

KDV245E

Revision No : 0

VCO FOR UHF Band Radio.

FEATURES

High Capacitance Ratio : C

0.5V/C2.5V

=2.5(Typ.)

Low Series Resistance : rs=0.35 (Typ.)

Useful for Small Size Tuner.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

CHARACTERISTIC SYMBOL RATING UNIT

Reverse Voltage

V

R

10 V

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Reverse Voltage

V

R

IR=1 A

10 - - V

Reverse Current

I

R

VR=10V

- - 3 nA

Capacitance

C

0.5V

VR=0.5V, f=1MHz

7.3 - 8.4 pF

C

2.5V

VR=2.5V, f=1MHz

2.75 - 3.4

Capacitance Ratio K

C

0.5V/C2.5V

, f=1MHz

2.4 2.5 -

Series Resistance

r

S

VR=1V, f=470MHz

- 0.35 -

C

1

CATHODE MARK

2

D

1. ANODE

2. CATHODE

E

A

B

F

DIM MILLIMETERS

A

B

C

D

E

_

1.60 0.10

+ _

1.20 0.10

+ _

0.80 0.10

+ _

+

0.30 0.05 _

+

0.60 0.10 _

+

0.13 0.05F

ESC

Marking

Type Name

E D

2003. 1. 27 2/2Revision No : 0

KDV245E

30

T

10

5

3

CAPACITANCE C (pF)

1

01

REVERSE VOLTAGE V (V)

C - V

TR

f=1MHz Ta=25 C

23456

R

r - V

sR

0.6

0.5

s

0.4

0.3

0.2

0.1

SERIES RESISTANCE r (Ω)

0

REVERSE VOLTAGE V (V)

10.1 30.3 50.5

f=470MHz Ta=25 C

10

R

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