KEC KDV239E Datasheet
VCO FOR UHF RADIO.
SEMICONDUCTOR
TECHNICAL DATA
KDV239E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
ᴌUltra Low Series Resistance : rS=0.44ή(Typ.)
ᴌSmall Package. (ESC Package)
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
T
j
T
stg
-55ᴕ150
15 V
150
ᴱ
ᴱ
C
1
CATHODE MARK
2
D
1. ANODE
2. CATHODE
E
A
B
F
DIM MILLIMETERS
A
B
C
D
E
_
+
1.60 0.10
_
+
1.20 0.10
_
+
0.80 0.10
_
+
0.30 0.05
_
+
0.60 0.10
_
+
0.13 0.05F
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio K
Series Resistance
V
R
I
R
C
2V
C
10V
r
S
IR=1ỌA
VR=15V
VR=2V, f=1MHz
VR=10V, f=1MHz
C2V/C
, f=1MHz
10V
VR=1V, f=470MHz
Marking
15 - - V
- - 3 nA
3.8 4.25 4.7
1.5 1.75 2.0
2.0 2.4 -
- 0.44 0.6
Type Name
JU
pF
ή
2000. 3. 7 1/2
Revision No : 0
KDV239E
K
10
7
5
V
3
CAPACITANCE C (pF)
1
0
4 8 12 16
REVERSE VOLTAGE V (V)
0.8
s
0.6
C - V
V
r - V
s
I - V
R
RR
100p
f=1MHz
Ta=25 C
10p
R
1p
Ta=80 C
Ta=60 C
Ta=25 C
0.1p
REVERSE CURRENT I (A)
0.01p
0
R
R
1.0
Ta=25 C
f=100MHz
0.8
s
5101520
REVERSE VOLTAGE V (V)
r - f
s
R
V =1V
R
Ta=25 C
25
SERIES RESISTANCE r (Ω)
C (%)
0.4
0.2
0.6
0.4
0.2
SERIES RESISTANCE r (Ω)
0
1
REVERSE VOLTAGE V (V)
31020
5
R
0
20 50 300 1
100
500
FREQUENCY f (MHz)
C - Ta
3
f=1MHz
2
1
0
-1
V
V
V
V
R
R
R
R
=
1
V
=2V
=6V
=10V
NOTE : C(%) = `100
C(Ta) - C(25)
C(25)
-2
CAPACITANCE CHANGE RATIO
-3
-25 0 25 50 75 100 125
-50
AMBIENT TEMPERATURE Ta ( C)
2000. 3. 7 2/2
Revision No : 0
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