KEC KDV1471 Datasheet
SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
KDV1471
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
ᴌHigh Capacitance Ratio : C1V/C5V=5.0(Min.)
ᴌExcellent C-V Characteristics.
ᴌVariations of Capacitance Values is Little.
ᴌSmall Package.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
GRADE
CAPACITANCE(CIV)
A 30.16~33.63
V
R
T
j
T
stg
-55ᴕ150
16 V
150
UNIT
ᴱ
ᴱ
E
B
LL
DIM
MILLIMETERS
_
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
J
P
C
H
N
2
1
PP
K
1. ANODE
2. NC
3. CATHODE
A
G
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 - 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
B 33.30~37.13
C 36.77~40.99
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio K
Series Resistance
V
R
I
R
C
1V
C
4.5V
r
S
pF
IR=10ỌA
VR=10V
VR=1V, f=1MHz
VR=4.5V, f=1MHz
C1V/C5V, f=1MHz
VR=1.5V, f=100MHz
Marking
Grade
Type Name
30.16 35.60 40.99
6.2 7.7 9.2
5.0 - -
W3
16 - - V
- - 50 nA
- 0.8 1.0
Lot No.
pF
ή
2001. 5. 28 1/2
Revision No : 1
KDV1471
100
50
30
10
CAPACITANCE C (pF)
5
01 3 5
500
Ta=25 C
300
100
f=50M
f=70MHz
f=100M
50
C - V
R
2
REVERSE VOLTAGE V (V)
Q - V
z
H
Hz
R
R
f=1MHz
Ta=25 C
4
1n
100p
R
10p
1p
100f
REVERSE CURRENT I (A)
10f
2 4 6 8 10 12
0
REVERSE VOLTAGE V (V)
1
V =1.5V
R
Ta=25 C
s
0.7
I - V
R
r - f
s
R
Ta=85 C
Ta=55 C
Ta=25 C
14 16
R
30
FIGURE OF MERIT Q
10
0
12345
REVERSE VOLTAGE V (V)
C(Ta)/C(25 C) - V (V)
1.08
1.06
1.04
1.02
1
C(Ta)/C(25 C)
0.98
0.96
0.94
VARIATION OF CAPACITANCE
0.92
0
123 45
Ta
Ta
Ta
Ta=-
Ta
=
=
=
=
85
55
25 C
15
-55
SERIES RESISTANCE r (Ω)
0.5
10020 50 300 1K
R
R
f=1MHz
C
C
C
C
1k
700
500
300
(ppm/ C)
VARIATION OF CAPACITANCE
100
0
FREQUENCY f (MHz)
(ppm/ C) - V
Ta=-55 C~+85 C
12345
500
R
f=1MHz
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
2/22001. 5. 28 Revision No : 1
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