KEC KDS142E Datasheet
2003. 1. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS142E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESM.
Low Forward Voltage : VF=1.0V (Max.).
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
20 V
Reverse Voltage
V
R
20 V
Maximum (Peak) Forward Current
I
FM
200 * mA
Average Forward Current
I
O
100 * mA
Surge Current (1 s)
I
FSM
300 * mA
Power Dissipation
P
D
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IF=10mA
- - 1.0 V
Reverse Current
I
R
VR=15V
- - 0.1
A
E
2
G
A
H
1
C
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
B
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
3
21
ESM
Marking
DS
2003. 1. 27 2/2
KDS142E
Revision No : 0
100
F
10
1
Ta=25 C
Ta=75 C
Ta=-25 C
0.1
Ta=125 C
FORWARD CURRENT I (mA)
0.01
0.4 0.8 1.2 1.6 2.0 2.4
0
FORWARD VOLTAGE V (V)
100
10
R
1
0.1
REVERSE CURRENT I (nA)
0.01
0
51015
I - V
FF
=125 C
a
Ta=75 C
Ta=25 C
T
I - V
RR
Ta=125 C
Ta=125 C
Ta=100 C
Ta=100 C
Ta=75 C
Ta=75 C
Ta=-25 C
I - V
FF
100
D1+D2D1
F
10
D2
1
Ta=25 C
Ta=75 C
Ta=125 C
Ta=-25 C
0.1
FORWARD CURRENT I (mA)
0.01
0
F
10
D1
D2
5
T
0.4 0.8 1.2 1.6
FORWARD VOLTAGE V (V)
C - V
F
RT
f=1MHz
(D2)
3
D1
D2
D1
D2
1
TOTAL CAPACITANCE C (pF)
0.5
1
(D1+D2)
30.5
(D1)
10 30
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
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