KEC KDR784 Datasheet
2003. 2. 25 1/1
SEMICONDUCTOR
TECHNICAL DATA
KDR784
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(3)
=0.42V(Typ.)
Small Package : USC.
MAXIMUM RATING (Ta=25 )
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4
4mm.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
30 V
Reverse Voltage
V
R
30 V
Maximum (Peak) Forward Current
I
FM
300 mA
Average Forward Current
I
O
100 mA
Surge Current (10ms)
I
FSM
1 A
Power Dissipation
P
D
200* mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.26 0.35
V
V
F(2)
IF=5mA
- 0.30 0.40
V
F(3)
IF=100mA
- 0.42 0.55
Reverse Current
I
R
VR=30V
- - 15
A
Total Capacitance
C
T
VR=1V, f=1MHz
- 40 - pF
I
J
G
H
C
I
MILLIMETERS
_
2.50 0.1
+
_
+
1.25 0.05
_
+
0.90 0.05
0.30+0.06/-0.04
_
+
1.70 0.05
MIN 0.17
_
+
0.126 0.03
0~0.1
1.0 MAX
_
+
0.15 0.05
_
+
0.4 0.05
2 +4/-2
4~6
B
1
CATHODE MARK
2
D
M
M
1. ANODE
2. CATHODE
K
A
E
J
DIM
A
B
C
D
E
F
G
H
K
L
M
USC
Marking
Type Name
L
F
UU
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