KEC KDR729 Datasheet

2003. 2. 25 1/2

SEMICONDUCTOR

TECHNICAL DATA

KDR729

SCHOTTKY BARRIER TYPE DIODE

Revision No : 4

LOW VOLTAGE HIGH SPEED SWITCHING.

FEATURES

Low Forward Voltage : V

F(4)

=0.43V(Typ.)

IO=200mA rectification possible.

Small Package : USC.

MAXIMUM RATING (Ta=25 )

* : Mounted on a glass epoxy circuit board of 20 20mm,

pad dimension of 4

4mm.

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Maximum (Peak) Reverse Voltage

V

RM

30 V

Reverse Voltage

V

R

30 V

Maximum (Peak) Forward Current

I

FM

300 mA

Average Forward Current

I

O

200 mA

Surge Current (10ms)

I

FSM

1 A

Power Dissipation

P

D

200* mW

Junction Temperature

T

j

125

Storage Temperature Range

T

stg

-55 125

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage

V

F(1)

IF=1mA

- 0.22 -

V

V

F(2)

IF=10mA

- 0.29 -

V

F(3)

IF=100mA

- 0.38 -

V

F(4)

IF=200mA

- 0.43 0.55

Reverse Current

I

R

VR=30V

- - 50

A

Total Capacitance

C

T

VR=0V, f=1MHz

- 50 - pF

I

J

G

H

C

I

MILLIMETERS

_

2.50 0.1

+

_
+

1.25 0.05
_

+

0.90 0.05

0.30+0.06/-0.04
_

+

1.70 0.05

MIN 0.17

_
+

0.126 0.03

0~0.1

1.0 MAX
_

+

0.15 0.05
_

+

0.4 0.05

2 +4/-2

4~6

B

1

CATHODE MARK

2

D

M

M

1. ANODE

2. CATHODE

K

A

E

J

DIM

A

B

C

D

E

F
G

H

K

L

M

USC

L

F

Marking

Type Name

MU

2003. 2. 25 2/2

KDR729

Revision No : 4

Ta=25 C

2

10

F

10

1

-1

10

-2

10

-3

10

FORWARD CURRENT I (mA)

-4

10

0 100

FORWARD VOLTAGE V (mV)

100

T

50

I - V

F

F

200 300 400 500

F

C - V

TR

Ta=25 C

f=1MHz

REVERSE CURRENT I (µA)

I - V

RR

10

R

Ta=25 C

5

1

0.5
05

10 15 20 3025

REVERSE VOLTAGE V (V)

R

10

TOTAL CAPACITANCE C (pF)

5

5

0

REVERSE VOLTAGE V (V)

1510

20 25

R

30