2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR721S
SCHOTTKY BARRIER TYPE DIODE
(CATHODE COMMAND)
Revision No : 1
For high speed switching circuit.
For small current rectification.
FEATURES
Low Forward Voltage : VF max=0.55V.
IO=200mA recification possible.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
IR=1mA
30 - - V
Forward Voltage
V
F
IF=0.2A
- - 0.55 V
Reverse Current
I
R
VR=30V
- - 50
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 13 - pF
Reverse Recovery Time
t
rr
IR=IF=10mA
- 3 - nS
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
30 V
Reverse Voltage
V
R
30 V
Average Forward Current
I
O
0.2 A
Non-repetitive peak surge current
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
E
B
LL
DIM
MILLIMETERS
A
2.93 0.20
B
1.30+0.20/-0.15
1.30 MAX
C
D
3
J
M
D
E
G
H
J
K
L
M
N
P
0.45+0.15/-0.05
2.40+0.30/-0.20
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
C
H
N
2
1
PP
K
1. ANODE 1
2. ANODE 2
3. CATHODE
A
G
SOT-23
1.90
0.95
_
+
1
Marking
Type Name
MF
Lot No.
2003. 2. 25 2/2
KDR721S
Revision No : 1
REVERSE CURRENT I (µA)
REVERSE CURRENT I (µA)
I - V
RR
2
10
Ta=25 C
R
10
3
10
Ta=25 C
2
10
F
I - V
FF
10
1
-1
10
0
510
REVERSE VOLTAGE V (V)
I - Ta
R
5
10
V =30V
R
4
10
R
3
10
2015 25
R
30
1
-1
10
FORWARD CURRENT I (mA)
-2
10
0
0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE V (V)
0.6
I =200mA
F
F
0.5
V - Ta
F
F
0.4
2
10
0.3
10
FORWARD VOLTAGE V (V)
1
-40
08040 120
160 200
AMBIENT TEMPERATURE Ta ( C)
0.2
-40
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta ( C)
C - V
TR
60
T
50
40
30
20
10
TERMINAL CAPACITANCE C (pF)
0
0
10 15 20 25 30
5
REVERSE VOLTAGE V (V)
R