2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR720S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
For high speed switching circuit.
For small current rectification.
FEATURES
Low Forward Voltage : VF=0.55V(Max).
IO=200mA recification possible.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IF=0.2A
- - 0.55 V
Reverse Current
I
R
VR=30V
- - 50
A
Total Capacitance
C
T
VR=0V, f=1MHz
- 30 - pF
Reverse Recovery Time
t
rr
IR=IF=10mA
- 3 - nS
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
30 V
Reverse Voltage
V
R
30 V
Average Forward Current
I
O
0.2 A
Non-repetitive peak surge current
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
E
B
LL
DIM MILLIMETERS
2.93 0.20
A
1.30+0.20/-0.15
B
C
D
3
J
M
H
N
C
2
1
PP
K
1. CATHODE 1
2. CATHODE 2
3. ANODE
A
G
1.30 MAX
0.45+0.15/-0.05
D
2.40+0.30/-0.20
E
G 1.90
H
J
0.13+0.10/-0.05
K
0.00 ~ 0.10
L
M
0.20 MIN
N
1.00+0.20/-0.10
P7
3
2
SOT-23
0.95
0.55
_
+
1
Marking
Type Name
MG
Lot No.
2003. 2. 25 2/2
KDR720S
Revision No : 1
I - V
3
10
2
10
F
10
1
-1
10
FORWARD CURRENT I (mA)
-2
10
Ta=150 C
Ta=100 C
Ta=25 C
0 0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE V (V)
V - Ta
0.5
0.4
F
0.3
I =1mA
0.2
F
F F
Ta=-25 C
F
I =100mA
F
F
I =200mA
F
REVERSE CURRENT I (µA)
I - V
RR
5
10
4
10
R
3
10
2
10
Ta=150 C
Ta=100 C
10
Ta=25 C
1
-1
10
0
51015202530
REVERSE VOLTAGE V (V)
I - Ta
R
4
10
3
10
R
V =30V
R
2
10
R
V =10V
R
V =5V
R
0.1
FORWARD VOLTAGE V (V)
0
-40
08040 120 200160
AMBIENT TEMPERATURE Ta ( C)
C - V
32
28
T
24
20
16
12
8
4
TOTAL CAPACITANCE C (pF)
0
0
51510 20 3025
10
REVERSE CURRENT I (µA)
1
-40 04080 160120 200
AMBIENT TEMPERAURE Ta ( C)
T R
Ta=25 C
f=1MHz
REVERSE VOLTAGE V (V)
R