
2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR701S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
For High frequency rectification
FEATURES
Low Forward Voltage : VFmax=0.55V.
IR=700mA recification possible.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
IR=1mA
30 - - V
Forward Voltage
V
F
IF=0.7A
- - 0.55 V
Reverse Current
I
R
VR=30V
- - 80
A
Total Capacitance
C
T
VR=0V, f=1MHz
- 190 - pF
Reverse Recovery Time
t
rr
IR=IF=100mA
- 7.5 - nS
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
30 V
Reverse Voltage
V
R
30 V
Average Forward Current
I
O
0.7 A
Non-repetitive peak surge current
I
FSM
5 A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
E
B
LL
DIM
MILLIMETERS
A
2.93 0.20
B
1.30+0.20/-0.15
1.30 MAX
C
D
3
J
M
D
E
G
H
J
K
L
M
N
P
0.45+0.15/-0.05
2.40+0.30/-0.20
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
C
H
N
2
1
PP
K
1. NC
2. ANODE
3. CATHODE
A
G
SOT-23
1.90
0.95
_
+
1
Marking
Type Name
DK
Lot No.

2003. 2. 25 2/2
KDR701S
Revision No : 1
REVERSE CURRENT I (µA)
I - V
RR
50
Ta=25 C
30
R
F
10
5
3
0.1
Ta=25 C
3
10
2
10
10
1
I - V
FF
0.01
FORWARD CURRENT I (mA)
F
0.001
0.8
0.7
0
I =700mA
F
100 200 300 400 500
FORWARD VOLTAGE V (V)
V - Ta
F
F
1
0
5
10 15 20 25 30
REVERSE VOLTAGE V (V)
I - Ta
R
4
10
Ta=25 C
3
10
R
R
0.6
2
10
0.5
10
REVERSE CURRENT I (µA)
1
-40
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta ( C)
C - V
TR
200
180
T
160
140
120
100
80
60
40
20
TERMINAL CAPACITANCE C (pF)
0
0
5 1015202530
0.4
0.3
FORWARD VOLTAGE V (V)
0.2
-40
0 40 80 120 160
AMBIENT TEMPERATURE Ta ( C)
REVERSE VOLTAGE V (V)
R