KEC KDR511T Datasheet

2003. 8. 4 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR511T
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
HIGH FREQUENCY RECTIFICATION.
FEATURES
Low Forward Voltage : VFmax=0.4V.
Low Leakage Current : IRmax=500 A.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
15 V
Reverse Voltage
V
R
15 V
Average Forward Current
I
O
1 A
Non-Repetitive Peak Surge Current
I
FSM
10 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IF=0.5A
- 0.30 0.35 V
IF=1A
- 0.35 0.40 V
Reverse Current
I
R
VR=10V
- - 500 A
VR=15V
- - 1000
Total Capacitance
C
T
VR=10V, f=1MHz
- 42 - pF
Reverse Recovery Time
t
rr
IF=IR=100mA
- - 15 nS
E
B
K
2
G
F
A
G
1
C
L
J
1. NC
2. ANODE
3. CATHODE
K
3
I
D
H
J
DIM MILLIMETERS
2
1
TSM
A
2.9 0.2
B
1.6+0.2/-0.1
0.70 0.05
C
0.4 0.1
D
2.8+0.2/-0.3
E
1.9 0.2
F
0.95
G
0.16 0.05
H
0.00-0.10
I
0.25+0.25/-0.15
J
K 0.60 L 0.55
_ +
_ +
_ +
_ +
_ +
3
Marking
Type Name
T 1
Lot No.
2003. 8. 4 2/2
KDR511T
Revision No : 1
3
0.1
1
Ta=125 C
Ta=100 C
F
FORWARD CURRENT I (A)
0.01
0.10
FORWARD VOLTAGE V (V)
3
10
I - V
F F
Ta=75 C
Ta=50 C
Ta=25 C
C - V
I - V
RR
100
Ta=125 C
R
10
1
0.1
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
REVERSE CURRENT I (mA)
0.01
0.50.40.30.2
F
R
f=1MHz
0
51015
REVERSE VOLTAGE V (V)
R
2
10
10
INTERTERMINAL CAPACITANCE C (pF)
1 3 10 305
REVERSE VOLTAGE V (V)
R
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