2002. 10. 2 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR412
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (USC)
Low Forward Voltage : VFmax=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Peak Reverse Voltage
V
RM
40 V
DC Reverse Voltage
V
R
20 V
Average Forward Current
I
O
0.5 A
Peak Forward Surge Current
I
FSM
3 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 +125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF (1) IF=10mA
- - 0.3 V
VF (2) IF=500mA
- - 0.5 V
Reverse Current
I
R
VR=10V
- - 30
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 20 - pF
I
J
G
H
F
C
I
MILLIMETERS
_
2.50 0.1
+
_
+
1.25 0.05
_
+
0.90 0.05
0.30+0.06/-0.04
_
+
1.70 0.05
MIN 0.17
_
+
0.126 0.03
0~0.1
1.0 MAX
_
+
0.15 0.05
_
+
0.4 0.05
2 +4/-2
4~6
L
B
1
A
CATHODE MARK
2
M
1. ANODE
2. CATHODE
E
D
M
USC
K
DIM
J
A
B
C
D
E
F
G
H
K
L
M
Marking
Type Name
3U
2002. 10. 2 2/2
KDR412
Revision No : 2
1
F
100m
10m
1m
FORWARD CURRENT I (A)
100µ
1K
T
100
Ta=125 C
Ta=75 C
Ta=25 C
0.10
FORWARD VOLTAGE V (V)
I - V
F F
Ta=-25 C
C - V
T
I - V
RR
10m
Ta=125 C
1m
R
Ta=75 C
100µ
10µ
REVERSE CURRENT I (A)
0.50.40.30.2
0.6
F
R
Ta=25 C
f=1MHz
1µ
5101520
0
a=25 C
T
25
REVERSE VOLTAGE V (V)
R
30 35
10
TOTAL CAPACITANCE C (pF)
1
0
10
REVERSE VOLTAGE V (V)
20 30 40
R
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