KEC KDR411S Datasheet
2002. 10. 2 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR411S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (SOT-23)
Low Forward Voltage : VFmax=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Peak Reverse Voltage
V
RM
40 V
DC Reverse Voltage
V
R
20 V
Average Forward Current
I
O
0.5 A
Peak Forward Surge Current
I
FSM
3 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 +125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF (1) IF=10mA
- - 0.3 V
VF (2) IF=500mA
- - 0.5 V
Reverse Current
I
R
VR=10V
- - 30
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 20 - pF
E
B
LL
DIM
MILLIMETERS
A
2.93 0.20
B
1.30+0.20/-0.15
1.30 MAX
C
D
3
J
M
D
E
G
H
J
K
L
M
N
P
0.45+0.15/-0.05
2.40+0.30/-0.20
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
C
H
N
2
1
PP
K
1. NC
2. ANODE
3. CATHODE
A
G
SOT-23
1.90
0.95
_
+
1
Marking
Type Name
U 3
Lot No.
2002. 10. 2 2/2
KDR411S
Revision No : 1
1
FT
100m
10m
1m
FORWARD CURRENT I (A)
100µ
1K
Ta=125 C
Ta=75 C
Ta=25 C
0.10
FORWARD VOLTAGE V (V)
I - V
F F
Ta=-25 C
C - V
TR
F
0.50.40.30.2
Ta=25 C
f=1MHz
0.6
10m
1m
R
100µ
10µ
REVERSE CURRENT I (A)
1µ
5101520
0
REVERSE VOLTAGE V (V)
I - V
RR
Ta=125 C
Ta=75 C
a=25 C
T
25
30 35
R
100
10
TOTAL CAPACITANCE C (pF)
1
0
10
REVERSE VOLTAGE V (V)
20 30 40
R
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