KEC KDR411 Datasheet

2003. 2. 24 1/2

SEMICONDUCTOR

TECHNICAL DATA

KDR411

SCHOTTKY BARRIER TYPE DIODE

Revision No : 3

LOW POWER RECTIFICATION

FOR SWITCHING POWER SUPPLY.

FEATURES

Small Surface Mounting Type. (USM)

Low Forward Voltage : VFmax=0.5V

High Reliability

CONSTRUCTION

Silicon epitaxial planar.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Peak Reverse Voltage

V

RM

40 V

DC Reverse Voltage

V

R

20 V

Average Forward Current

I

O

0.5 A

Peak Forward Surge Current

I

FSM

3 A

Junction Temperature

T

j

125

Storage Temperature Range

T

stg

-40 +125

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage

VF (1) IF=10mA

- - 0.3 V

VF (2) IF=500mA

- - 0.5 V

Reverse Current

I

R

VR=10V

- - 30

A

Total Capacitance

C

T

VR=10V, f=1MHz

- 20 - pF

E

B

MM

DIM

A

2

J

A

G

1

C

L

N

K

1. NC

2. ANODE

3. CATHODE

D

B

H

C

D

E

G

H

J

K

L

M 0.42 0.10

N 0.10 MIN

3

N

USM

MILLIMETERS

_
+

2.00 0.20
_

+

1.25 0.15
_

+

0.90 0.10

0.3+0.10/-0.05
_

+

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

0.00-0.10

0.70
_

+

3

1

2

Marking

U 3

2003. 2. 24 2/2

KDR411

Revision No : 3

1

F

100m

10m

1m

FORWARD CURRENT I (A)

100µ

1K

T

100

Ta=125 C

Ta=75 C

Ta=25 C

0.10

FORWARD VOLTAGE V (V)

I - V

F F

Ta=-25 C

C - V

T

R

F

0.50.40.30.2

Ta=25 C
f=1MHz

0.6

10m

R

1m

100µ

10µ

REVERSE CURRENT I (A)

1µ

5101520

0

REVERSE VOLTAGE V (V)

I - V

RR

Ta=125 C

Ta=75 C

a=25 C

T

25

R

30 35

10

TOTAL CAPACITANCE C (pF)

1

0

10

REVERSE VOLTAGE V (V)

20 30 40

R