2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR393S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
Low Voltage High Speed Switching.
FEATURES
Low Forward Voltage : VF =0.60V(Max.)
Low Reverse Current : IR=5 A(Max.)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IF=10mA
- 0.36 V
IF=100mA
- 0.51 0.60
Reverse Current
I
R
VR=40V
- - 5
A
Total Capacitance
C
T
VR=0V, f=1MHz
- 20 25 pF
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
40 V
Reverse Voltage
V
R
40 V
Average Forward Current
I
O
0.1 A
Non-repetitive peak surge current
(10mA)
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
E
B
LL
DIM
MILLIMETERS
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
A
G
H
N
C
1. ANODE 1
2. ANODE 2
3. CATHODE 1, 2
2
1
3
PP
M
K
A
B
C
D
D
E
G
H
J
K
L
M
N
J
P
SOT-23
Marking
Type Name
R9
Lot No.
2003. 2. 25 2/2
KDR393S
Revision No : 1
C - V
TR
25
T
20
15
10
5
TERMINAL CAPACITANCE C (pF)
0
0
10 20 30 40
REVERSE VOLTAGE V (V)
I - V
FF
8
10
7
10
F
6
10
5
10
4
10
3
10
FORWARD CURRENT I (nA)
2
10
0 200 400 600 800
FORWARD VOLTAGE V (mV)
I - V
3
10
R
2
10
RR
REVERSE CURRENT I (nA)
10
010
R
REVERSE VOLTAGE V (V)
20 30 40
R
F