SEMICONDUCTOR
KDR378E
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
ᴌLow Forward Voltage : VF=0.24(Typ.) IF=5mA
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SCHOTTKY BARRIER TYPE DIODE
E
B
2
G
A
H
1
V
RRM
V
R
I
O
I
FSM
P
D
T
j
T
stg
15 V
10 V
0.1 A
1 A
100 mW
125
-55ᴕ125
ᴱ
ᴱ
C
1. ANODE 1
2. ANODE 2
3. CATHODE
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
3
1
2
ESM
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V
F(1)
Forward Voltage
Reverse Current
Total Capacitance
V
F(2)
V
F(3)
I
R
C
T
IF=1mA
IF=5mA
IF=100mA
VR=10V
VR=0V, f=1MHz
Marking
X 3
- 0.19 -
- 0.24 -
- 0.39 0.50
- - 20
- 14 30 pF
V
ỌA
2001. 6. 7 1/2
Revision No : 1
KDR378E
FORWARD CURRENT I (µA)
I - V
6
10
Ta=25 C
5
10
F
4
10
3
10
2
10
10
1
0
80
160 240 320 40040 120 200 280 360
FORWARD VOLTAGE V (mV)
T
F
C - V
F
10
Ta=25 C
R
5
3
REVERSE CURRENT I (µA)
1
0246810
F
REVERSE VOLTAGE V (V)
R
I - V
R
R
R
16
14
T
f=1MHz
Ta=25 C
12
10
8
6
4
2
TERMINAL CAPACITANCE C (pF)
0
0246810
REVERSE VOLTAGE V (V)
R
2001. 6. 7 2/2
Revision No : 1