2003. 6. 13 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR377E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 3
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.43V (Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
40 V
Reverse Voltage
V
R
40 V
Maximum (Peak) Forward Current
I
FM
150 mA
Average Forward Current
I
O
30 mA
Surge Current (10ms)
I
FSM
200 mA
Power Dissipation
P
D
150* mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4
4mm.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.29 0.37
V
V
F(2)
IF=30mA
- 0.43 0.55
Reverse Current
I
R
VR=40V
- - 20
A
Total Capacitance
C
T
VR=1V, f=1MHz
- 6.0 - pF
C
1
CATHODE MARK
2
D
1. ANODE
2. CATHODE
A
B
E
F
DIM MILLIMETERS
A
B
C
D
E
_
1.60 0.10
+
_
1.20 0.10
+
_
0.80 0.10
+
_
0.30 0.05
+
_
+
0.60 0.10
_
+
0.13 0.05F
ESC
Marking
Type Name
VU
2003. 6. 13 2/2
KDR377E
Revision No : 3
I - V
6
10
Ta=25 C
5
10
F
4
10
3
10
2
10
10
FORWARD CURRENT I (uA)
1
0
0.2
FORWARD VOLTAGE V (V)
C - V
50
30
T
F F
0.4 0.6 0.8
F
TR
Ta=25 C
f=1MHz
3
10
R
10
Ta=25 C
2
REVERSE CURRENT I (nA)
10
010
20 30 40 50 60
REVERSE VOLTAGE V (V)
I - V
RR
R
10
5
3
TERMINAL CAPACITANCE C (pF)
1
0
10 20 30 40
REVERSE VOLTAGE V (V)
R