KEC KDR377 Datasheet

2003. 6. 13 1/2

SEMICONDUCTOR

TECHNICAL DATA

KDR377

SCHOTTKY BARRIER TYPE DIODE

Revision No : 4

LOW VOLTAGE HIGH SPEED SWITCHING.

FEATURES

Low Forward Voltage : V

F(2)

=0.43V (Typ.)

Small Package : USC.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Maximum (Peak) Reverse Voltage

V

RM

40 V

Reverse Voltage

V

R

40 V

Maximum (Peak) Forward Current

I

FM

150 mA

Average Forward Current

I

O

30 mA

Surge Current (10ms)

I

FSM

200 mA

Power Dissipation

P

D

200* mW

Junction Temperature

T

j

125

Storage Temperature Range

T

stg

-55 125

* : Mounted on a glass epoxy circuit board of 20 20mm,

pad dimension of 4

4mm.

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage

V

F(1)

IF=1mA

- 0.29 0.37
V

V

F(2)

IF=30mA

- 0.43 0.55

Reverse Current

I

R

VR=40V

- - 20

A

Total Capacitance

C

T

VR=1V, f=1MHz

- 6.0 - pF

I

J

G

C

I

MILLIMETERS

_

2.50 0.1

+

_
+

1.25 0.05
_

+

0.90 0.05

0.30+0.06/-0.04
_

+

1.70 0.05

MIN 0.17

_
+

0.126 0.03

0~0.1

1.0 MAX
_

+

0.15 0.05
_

+

0.4 0.05

2 +4/-2

4~6

B

1

CATHODE MARK

2

D

M

M

1. ANODE

2. CATHODE

K

A

E

J

DIM

A

B

C

D

E

F
G

H

K

L

M

USC

L

H

F

Marking

Type Name

VU

2003. 6. 13 2/2

KDR377

Revision No : 4

6

10

Ta=25 C

5

10

F

4

10

3

10

2

10

10

FORWARD CURRENT I (uA)

1

0

0.2

FORWARD VOLTAGE V (V)

C - V

50

30

T

I - V

FF

0.4 0.6 0.8

F

TR

Ta=25 C

f=1MHz

3

10

R

10

Ta=25 C

2

REVERSE CURRENT I (nA)

10

010

20 30 40 50 60

REVERSE VOLTAGE V (V)

I - V

RR

R

10

5

3

TERMINAL CAPACITANCE C (pF)

1

0

10 20 30 40

REVERSE VOLTAGE V (V)

R