KEC KDR368E Datasheet
2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR368E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.23V (Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
20 V
Reverse Voltage
V
R
20 V
Maximum (Peak) Forward Current
I
FM
200 mA
Average Forward Current
I
O
100 mA
Surge Current (10ms)
I
FSM
1 A
Power Dissipation
P
D
150* mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.18 -
V
V
F(2)
IF=5mA
- 0.23 0.30
V
F(3)
IF=100mA
- 0.35 0.50
Reverse Current
I
R
VR=10V
- - 20
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 20 40 pF
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4
4mm.
C
1
CATHODE MARK
2
D
1. ANODE
2. CATHODE
A
B
E
F
DIM MILLIMETERS
A
B
C
D
E
_
1.60 0.10
+
_
1.20 0.10
+
_
0.80 0.10
+
_
0.30 0.05
+
_
+
0.60 0.10
_
+
0.13 0.05F
ESC
Marking
Type Name
4U
2003. 2. 25 2/2
KDR368E
Revision No : 1
100m
F
10m
1m
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
100µ
FORWARD CURRENT I (A)
10µ
0
0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE V (V)
40
30
T
I - V
F F
Ta=0 C
a=-25 C
T
C - V
I - V
-2
10
-3
R
10
-4
10
-5
10
RR
Ta=125 C
Ta=75 C
Ta=25 C
REVERSE CURRENT I (A)
-6
10
0
F
RT
f=1MHz
Ta=25 C
240
200
510
REVERSE VOLTAGE V (V)
15 20 25
R
P - Ta
Mounted on a glass
epoxy circuit board
of 20`20mm, pad
dimension 4`4mm.
160
20
10
CAPACITANCE C (pF)
0
REVERSE VOLTAGE V (R)
0.30.130m10m 1 3 10 20
R
120
80
40
POWER DISSIPATION P (mW)
0
50
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
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