KEC KDR367E Datasheet

2003. 2. 25 1/2

SEMICONDUCTOR

TECHNICAL DATA

KDR367E

SCHOTTKY BARRIER TYPE DIODE

Revision No : 1

LOW VOLTAGE HIGH SPEED SWITCHING.

FEATURES

Low Forward Voltage : V

F(2)

=0.23V (Typ.)

Small Package : ESC.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Maximum (Peak) Reverse Voltage

V

RM

15 V

Reverse Voltage

V

R

10 V

Maximum (Peak) Forward Current

I

FM

200 mA

Average Forward Current

I

O

100 mA

Surge Current (10ms)

I

FSM

1 A

Power Dissipation

P

D

150* mW

Junction Temperature

T

j

125

Storage Temperature Range

T

stg

-55 125

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage

V

F(1)

IF=1mA

- 0.18 -

V

V

F(2)

IF=5mA

- 0.23 0.30

V

F(3)

IF=100mA

- 0.35 0.50

Reverse Current

I

R

VR=10V

- - 20

A

Total Capacitance

C

T

VR=0V, f=1MHz

- 20 40 pF

* : Mounted on a glass epoxy circuit board of 20 20mm,

pad dimension of 4

4mm.

C

1

CATHODE MARK

2

D

1. ANODE

2. CATHODE

A

B

E

F

DIM MILLIMETERS

A

B

C

D

E

_

1.60 0.10

+
_

1.20 0.10

+
_

0.80 0.10

+
_

0.30 0.05

+

_
+

0.60 0.10
_

+

0.13 0.05F

ESC

Marking

Type Name

SU

2003. 2. 25 2/2

KDR367E

Revision No : 1

100m

F

10m

Ta=100 C

1m

Ta=75 C

Ta=50 C

Ta=25 C

100µ

FORWARD CURRENT I (A)

10µ

0

0.1 0.2 0.3 0.4 0.5

FORWARD VOLTAGE V (V)

40

30

T

I - V

F F

25 C

Ta=0 C

Ta=-

C - V

I - V

RR

1m

Ta=100 C

100µ

R

Ta=75 C

Ta=50 C

10µ

Ta=25 C

1µ

100n

Ta=0 C

Ta=-25 C

REVERSE CURRENT I (A)

10n

0

F

RT

f=1MHz
Ta=25 C

240

200

246810

REVERSE VOLTAGE V (V)

R

P - Ta

Mounted on a glass
epoxy circuit board
of 20`20mm, pad
dimension 4`4mm.

160

20

10

CAPACITANCE C (pF)

0

REVERSE VOLTAGE V (R)

0.30.130m10m 1 3 10 20

R

120

80

40

POWER DISSIPATION P (mW)

0

50

25 50 75 100 125 150

AMBIENT TEMPERATURE Ta ( C)