KEC KDR357 Datasheet

2003. 2. 25 1/2

SEMICONDUCTOR

TECHNICAL DATA

KDR357

SCHOTTKY BARRIER TYPE DIODE

Revision No : 3

LOW VOLTAGE HIGH SPEED SWITCHING.

FEATURES

Low Forward Voltage : V

F(3)

=0.43V(Typ.)

Low Reverse Current : IR=5 (Max.)

Small Package : USC.

MAXIMUM RATING (Ta=25 )

* : Mounted on a glass epoxy circuit board of 20 20mm,

pad dimension of 4

4mm.

CHARACTERISTIC SYMBOL RATING UNIT

Maximum (Peak) Reverse Voltage

V

RM

45 V

Reverse Voltage

V

R

40 V

Maximum (Peak) Forward Current

I

FM

200 mA

Average Forward Current

I

O

100 mA

Surge Current (10ms)

I

FSM

1 A

Power Dissipation

P

D

200

*

mW

Junction Temperature

T

j

125

Storage Temperature Range

T

stg

-55 125

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage

V

F(1)

IF=1mA

- 0.24 -

V

V

F(2)

IF=10mA

- 0.31 -

V

F(3)

IF=100mA

- 0.43 0.55

Reverse Current

I

R

VR=40V

- - 5

A

Total Capacitance

C

T

VR=0V, f=1MHz

- 30 - pF

ELECTRICAL CHARACTERISTICS (Ta=25 )

I

J

G

H

C

I

MILLIMETERS

_

2.50 0.1

+

_
+

1.25 0.05
_

+

0.90 0.05

0.30+0.06/-0.04
_

+

1.70 0.05

MIN 0.17

_
+

0.126 0.03

0~0.1

1.0 MAX
_

+

0.15 0.05
_

+

0.4 0.05

2 +4/-2

4~6

B

1

CATHODE MARK

2

D

M

M

1. ANODE

2. CATHODE

K

A

E

J

DIM

A

B

C

D

E

F
G

H

K

L

M

USC

Marking

Type Name

L

F

LU

2003. 2. 25 2/2

KDR357

Revision No : 3

Ta=25 C

5

10

4

10

F

3

10

2

10

10

1

FORWARD CURRENT I (uA)

0.1
0 200 300100 400 500

FORWARD VOLTAGE V (mV)

30

T

25

I - V

FF

C - V

T

R

I - V

R

R

3

10

Ta=25 C

R

2

10

REVERSE CURRENT I (nA)

10

010

F

f=1MHz
Ta=25 C

REVERSE VOLTAGE V (V)

20 30

R

40

20

15

10

5

TERMINAL CAPACITANCE C (pF)

0

0

10 20 30 40

REVERSE VOLTAGE V (V)

R