KEC KDR331V Datasheet

SEMICONDUCTOR
KDR331V
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF=0.25(Typ.) @IF=5mA
Very Small Package : VSM.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
* : Unit Rating. Total Rating=Unit Rating1.5
V
I
T
V
I
FM
I
FSM
P
T
T
RM
O
stg
opr
SCHOTTKY BARRIER TYPE DIODE
E
B
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
_
1.2 0.05
+ _
0.8 0.05
+ _
0.5 0.05
+ _
0.3 0.05
+ _
1.2 0.05
+ _
0.8 0.05
+
0.40 _
0.12 0.05
J
+
_ +
5
3
1
2
2
G
A
1
H
K
P
P
15 V
R
10 V
C
100 * mA
50 * mA
1 * A
D
j
100 mW
125
-55125
-40100
1. ANODE 1
2. ANODE 2
3. CATHODE
VSM
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V
F(1)
Forward Voltage
Reverse Current
Total Capacitance
V
F(2)
V
F(3)
I
R
C
Marking
Type Name
IF=1mA
IF=5mA
IF=50mA
VR=10V
T
VR=0V, f=1MHz
- 0.21 -
- 0.25 0.30
- 0.35 0.50
- - 20
- 13 40 pF
UW
V
A
2001. 7. 25 1/2
Revision No : 0
KDR331V
1
Ta=23 C
F
0.1
FORWARD CURRENT I (mA)
0.01 0
14
100 200 300 400 500 12
FORWARD VOLTAGE V (mV)
I - V
FF
C - V
TR
I - V
RR
10
Ta=23 C
R
1
0.1
REVERSE CURRENT I (A)
0.01 24
0
F
REVERSE VOLTAGE V (V)
8610
R
P - Ta
120
12
T
10
8
6
4
2
TOTAL CAPACITANCE C (pF)
0
0.01 0.1
REVERSE VOLTAGE V (V)
11020
R
100
80
60
40
20
POWER DISSIPATION P (mW)
0
0
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
2001. 7. 25 2/2
Revision No : 0
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