
SEMICONDUCTOR
KDR331
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
ᴌ
Low Forward Voltage : VF=0.25(Typ.) @IF=5mA
ᴌSmall Package : USM.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
* : Unit Rating. Total Rating=Unit Ratingᴧ1.5
V
I
T
V
I
FM
I
FSM
P
T
T
RM
O
stg
opr
SCHOTTKY BARRIER TYPE DIODE
E
B
MM
DIM
MILLIMETERS
A
2
J
A
G
1
C
15 V
R
10 V
L
N
K
D
B
3
N
C
D
E
G
H
J
K
L
H
M
N
100 * mA
50 * mA
1 * A
D
j
100 mW
125
-55ᴕ125
-40ᴕ100
ᴱ
ᴱ
ᴱ
1. ANODE 1
2. ANODE 2
3. CATHODE
USM
_
+
2.00 0.20
_
+
1.25 0.15
_
+
0.90 0.10
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
0.42 0.10
0.10 MIN
3
1
2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V
F(1)
Forward Voltage
Reverse Current
Total Capacitance
V
F(2)
V
F(3)
I
R
C
Marking
Type Name
IF=1mA
IF=5mA
IF=50mA
VR=10V
T
VR=0V, f=1MHz
- 0.21 -
- 0.25 0.30
- 0.35 0.50
- - 20
- 13 40 pF
UW
V
ỌA
2001. 11. 29 1/2
Revision No : 1

KDR331
1
Ta=23 C
F
0.1
FORWARD CURRENT I (mA)
0.01
0
14
100 200 300 400 500 12
FORWARD VOLTAGE V (mV)
I - V
FF
C - V
TR
I - V
RR
10
Ta=23 C
R
1
0.1
REVERSE CURRENT I (A)
0.01
0
24
F
REVERSE VOLTAGE V (V)
8610
R
P - Ta
120
12
T
10
8
6
4
2
TOTAL CAPACITANCE C (pF)
0
0.01 0.1
REVERSE VOLTAGE V (V)
11020
R
100
80
60
40
20
POWER DISSIPATION P (mW)
0
0
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
2001. 11. 29 2/2
Revision No : 1