KEC KDR322 Datasheet

SEMICONDUCTOR

TECHNICAL DATA

LOW VOLTAGE HIGH SPEED SWITCHING.

KDR322

SILICON EPITAXIAL

SCHOTTKY BARRIER TYPE DIODE

FEATURES

ᴌLow Forward Voltage : VF=0.54V (Typ.).

ᴌLow Reverse Current : I

=5ỌA (Max.).

R

ᴌSmall Package : USM.

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC SYMBOL RATING UNIT

Maximum (Peak) Reverse Voltage

Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

Power Dissipation

Junction Temperature

Storage Temperature Range

E

B

MM

DIM

MILLIMETERS

A

3

N

USM

D

B

C

D

E

G
H

J

K

L

H

M

N

2

J

A

G

1

C

L

N

K

V

RM

V

R

I

FM

I

O

P

D

T

j

T

stg

45 V

40 V

300 mA

100 mA

100 mW

125

-55ᴕ125

1. N.C

2. ANODE

3. CATHODE

ᴱ

ᴱ

_
+

2.00 0.20
_

+

1.25 0.15

_
+

0.90 0.10

0.3+0.10/-0.05
_

+

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

0.00-0.10

0.70
_

+

0.42 0.10

0.10 MIN

3

1

2

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

VF (1) IF=1mA

Forward Voltage

Reverse Current

Total Capacitance

VF (2) IF=10mA

VF (3) IF=100mA

I

C

Marking

U L

- 0.28 -

- 0.36 -

- 0.54 0.60

R

T

VR=40V

VR=0, f=1MHz

- - 5

- 18 25 pF

V

ỌA

2001. 12. 4 1/2

Revision No : 2

KDR322

300m

100m

F

30m

10m

3m

Ta=25 C

1m

0.3m

FORWARD CURRENT I (A)

0.1m

m

100

m

30

m

10

m

3

1

300n

100n

30n

10n

0.3n

0.1n

m

3n

1n

R

REVERSE CURRENT I (A)

Ta=100 C

0

0

0.2 0.4 0.6 0.8 1.0

FORWARD VOLTAGE V (V)

Ta=100 C

Ta=75 C

Ta=50 C

Ta=25 C

Ta=0 C

Ta=-25 C

10 20 30 40 50

REVERSE VOLTAGE V (V)

FF

C

Ta=-25

I - V

RR

C - VI - V

TR

100

50

T

30

10

5

3

TOTAL CAPACITANCE C (pF)

1

4 8 12 16 20 24 28 32 36

0

F

R

REVERSE VOLTAGE V (V)

R

2001. 12. 4 2/2

Revision No : 2