KEC KDR105S Datasheet

2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR105S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
High frequency rectification
FEATURES
Low Forward Voltage : VFmax=0.55V.
Low Leakage Current : IRmax=10 A.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
IR=50 A
50 - - V
Forward Voltage
V
F
IF=0.1A
- - 0.55 V
Reverse Current
I
R
VR=25V
- - 10
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 7.7 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
50 V
Reverse Voltage
V
R
50 V
Average Forward Current
I
O
0.1 A
Non-repetitive Peak Surge Current
I
FSM
2 A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
2
H
1
PP
N
C
K
D
3
M
D
E
G
H
J
K
L
M
N
J
P
1. NC
2. ANODE
3. CATHODE
SOT-23
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
Marking
Type Name
DL
Lot No.
2003. 2. 25 2/2
KDR105S
Revision No : 1
5
10
4
F
10
3
10
2
10
10
FORWARD CURRENT I (uA)
1
0.1 0 100
200 300 400 500 600
FORWARD VOLTAGE V (mV)
2
10
I - V
FF
V - C
R
I - V
3
10
R
2
10
RR
REVERSE CURRENT I (nA)
10
010
F
20 30 40 50
REVERSE VOLTAGE V (V)
R
10
CAPACITANCE C (pF)
1
0
10
20
REVERSE VOLTAGE V (V)
30
R
40
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