2003. 1. 22 1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A21VPS, E35A21VPR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Zener Voltage : 21V(Typ.)
POLARITY
E35A21VPS (+ Type)
E35A21VPR (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
F
IFM=100A
- - 1.10 V
Zener Voltage
V
Z
IZ=10mA
19 21 23 V
Reverse Current
I
R
VR=17V
- - 10
A
Transient Thermal Resistance
V
F
IFM=100A, IM=100mA, Pw=100mS
- - 130 mV
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , VR=17V
- - 2.5 mA
Temperature Resistance
R
th
DC total junction to case - 0.83 -
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
35 A
Peak 1 Cycle Surge Current
I
FSM
300 (60Hz) A
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
I
RSM
35 A
Transient Peak Reverse Voltage
V
RSM
18 V
Peak Reverse Voltage
V
RM
16 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
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0.32
3.1
0.5
8.4 MAX
F2
D
E
F1
G
A
DIM MILLIMETERS
Φ11.7+0.1/-0
A
3.85+0/-0.2
B
D
E 1.55
DIM MILLIMETERSTYPE
L2
Φ1.45 0.1
POLARITY
S
R
_
+
L2
L1
B
MILLIMETERSDIM
F1
F2
G
L1
17.5+0/-1.5
21.5+0/-1.5
H-PF